Interaction of aluminum with hydrogenated amorphous silicon at low temperatures

1994 ◽  
Vol 75 (8) ◽  
pp. 3928-3935 ◽  
Author(s):  
M. Shahidul Haque ◽  
H. A. Naseem ◽  
W. D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Low Temperatures ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Transient Infrared Stimulated Photoconductivity in a-SI:H at Low Temperatures

1995 ◽  
Vol 377 ◽  
Author(s):  
S. Heck ◽  
P. Stradins ◽  
H. Fritzsche
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Time Resolution ◽  
Low Temperatures ◽  
Hydrogenated Amorphous Silicon ◽  
Infrared Light ◽  
Dual Beam ◽  
Tunneling Recombination ◽  
Hydrogenated Amorphous

ABSTRACTDual beam photoconductivity with bandgap primary light and hv = 0.4- 0.6eV infrared light steps was measured with Ims time resolution in hydrogenated amorphous silicon (a-Si:H) at 4.2K. The results can be described by assuming that the photocurrent transients are due to energy-loss hopping of photocarriers and that the infrared light promotes recombination by reexciting photocarriers thereby enhancing the probability of tunneling recombination.

Microstructure Characterization of Amorphous Silicon Films by Effusion Measurements of Implanted Helium

2013 ◽  
Vol 1536 ◽  
pp. 175-180 ◽  
Author(s):  
W. Beyer ◽  
W. Hilgers ◽  
D. Lennartz ◽  
F.C. Maier ◽  
N.H. Nickel ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Low Temperatures ◽  
Plasma Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hot Wire ◽  
Common Features ◽  
Hydrogenated Amorphous

ABSTRACTAn important property of thin film silicon and related materials is the microstructure which may involve the presence of interconnected and isolated voids. We report on effusion measurements of implanted helium (He) to detect such voids. Several series of hydrogenated and unhydrogenated amorphous silicon films prepared by the methods of plasma deposition, hot wire deposition and vacuum evaporation were investigated. The results show common features like a He effusion peak at low temperatures attributed to He out-diffusion through a compact material or through interconnected voids, and a He effusion peak at high temperatures attributed to He trapped in isolated voids. While undoped plasma-grown device-grade hydrogenated amorphous silicon (a-Si:H) films show a rather low concentration of such isolated voids, its concentration can be rather high in doped a-Si:H, in unhydrogenated evaporated material and others.

Fluctuating Defect Density Probed with Noise Spectroscopy in Hydrogenated Amorphous Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
P.A.W.E. Verleg ◽  
O. Uca ◽  
J. I. Dijkhuis
Keyword(s):  
Amorphous Silicon ◽  
Low Temperatures ◽  
Noise Source ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Weakly Bound ◽  
Thermally Activated ◽  
Noise Spectroscopy ◽  
Resistance Fluctuations ◽  
Hydrogenated Amorphous

ABSTRACTResistance fluctuations have been studied in hydrogenated amorphous silicon in the temperature range between 300 K and 450 K. The primary noise source has a power spectrum of approximately 1/f and is ascribed to hydrogen motion. Hopping of weakly bound hydrogen is thermally activated at such low temperatures with an average activation energy of 0.85 eV. The attempt rate amounts to 7 · 1012 s−1.

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