Static and dynamic behavior of a Si/Si0.8Ge0.2/Si heterojunction bipolar transistor using Monte Carlo simulation

1994 ◽  
Vol 75 (6) ◽  
pp. 2963-2969 ◽  
Author(s):  
Sylvie Galdin ◽  
Philippe Dollfus ◽  
Patrice Hesto
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Dynamic Behavior ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Influence of base dopant out-diffusion into the emitter in heterojunction bipolar transistor using Monte Carlo simulations

1995 ◽  
Vol 157 (1-4) ◽  
pp. 231-235 ◽  
Author(s):  
Sylvie Galdin ◽  
Philippe Dollfus ◽  
Mireille Mouis ◽  
Françoise Meyer ◽  
Patrice Hesto
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor

Monte-Carlo simulation of the dynamic behavior of a CMOS inverter struck by a heavy ion

1994 ◽  
Vol 41 (3) ◽  
pp. 619-624 ◽  
Author(s):  
C. Brisset ◽  
P. Dollfus ◽  
P. Hesto ◽  
O. Musseau
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Dynamic Behavior ◽  
Heavy Ion ◽  
Cmos Inverter

Monte Carlo evaluation of electron transport in heterojunction bipolar transistor base structures

1986 ◽  
Vol 33 (7) ◽  
pp. 881-888 ◽  
Author(s):  
C.M. Maziar ◽  
M.E. Klausmeier-Brown ◽  
S. Bandyopadhyay ◽  
M.S. Lundstrom ◽  
S. Datta
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Monte Carlo Evaluation

scholarly journals Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 387-391 ◽  
Author(s):  
B. Neinhüs ◽  
S. Decker ◽  
P. Graf ◽  
F. M. Bufler ◽  
B. Meinerzhagen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Parameter Space ◽  
Relaxation Times ◽  
Heterojunction Bipolar Transistor ◽  
Doping Density ◽  
Device Model ◽  
Carrier Temperature ◽  
Bulk Model ◽  
Good Agreement

Good agreement between a hydrodynamic and a Monte-Carlo device model is demonstrated in this paper for an advanced SiGe Heterojunction Bipolar Transistor. This result is based on two principles: 1) Extraction (from the Monte-Carlo bulk model under homogeneous conditions) of the relaxation times τ at discrete points of the parameter space spanned by the Ge-content x, doping density N, carrier temperature TC and lattice temperature TL. 2) Modeling of the relaxation times τ(x,  TC,  TL) by splines.

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