Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low‐pressure chemical‐vapor‐deposition reactor

1996 ◽  
Vol 80 (5) ◽  
pp. 3056-3061
Author(s):  
Kow‐Ming Chang ◽  
Ta‐Hsun Yeh ◽  
Shih‐Wei Wang ◽  
Chii‐Horng Li
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reactive Ion Etching ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Ion Etching ◽  
Chemical Vapor Deposition Reactor ◽  
Pressure Chemical

Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates

2003 ◽  
Vol 804 ◽  
Author(s):  
Lijuan Zhong ◽  
Fang Chen ◽  
Stephen A. Campbell ◽  
Wayne L. Gladfelter
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Rutherford Backscattering ◽  
Chemical Vapor Deposition Reactor ◽  
Metal Nitrates ◽  
Metal Silicate ◽  
Pressure Chemical

ABSTRACTA modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 °C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

Influence of temperature gradients on partial pressures in a low‐pressure chemical‐vapor‐deposition reactor

1994 ◽  
Vol 76 (5) ◽  
pp. 3130-3139 ◽  
Author(s):  
T. G. M. Oosterlaken ◽  
G. J. Leusink ◽  
G. C. A. M. Janssen ◽  
S. Radelaar ◽  
K. J. Kuijlaars ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Temperature Gradients ◽  
Influence Of Temperature ◽  
Chemical Vapor Deposition Reactor ◽  
Partial Pressures ◽  
Pressure Chemical
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