Electrical properties of ferroelectric thin‐film capacitors with hybrid (Pt,RuO2) electrodes for nonvolatile memory applications

1995 ◽  
Vol 77 (5) ◽  
pp. 2146-2154 ◽  
Author(s):  
H. N. Al‐Shareef ◽  
O. Auciello ◽  
A. I. Kingon
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Nonvolatile Memory ◽  
Ferroelectric Thin Film ◽  
Thin Film Capacitors ◽  
Memory Applications

$\hbox{PbZr}_{x}\hbox{Ti}_{1 - x}\hbox{O}_{3}$ Ferroelectric Thin-Film Capacitors for Flexible Nonvolatile Memory Applications

2010 ◽  
Vol 31 (9) ◽  
pp. 1017-1019 ◽  
Author(s):  
Jonghyun Rho ◽  
Sang Jin Kim ◽  
Wook Heo ◽  
Nae-Eung Lee ◽  
Hwan-Soo Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Nonvolatile Memory ◽  
Ferroelectric Thin Film ◽  
Thin Film Capacitors ◽  
Memory Applications

Study on Multilayered Electrodes for Ferroelectric Thin Film Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
Ilsub Chung ◽  
J.K. Lee ◽  
Wan In Lee ◽  
C.W. Chung
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Electrical Properties ◽  
Physical Properties ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Film ◽  
Interfacial Engineering ◽  
Pzt Film ◽  
Thin Film Capacitors ◽  
Pzt Films

ABSTRACTThe ferroelectric properties of PZT on RuO2 electrodes were compared to those on RuOStudy on Multilayered Electrodes for Ferroelectric Thin Film Capacitors. It seems that the microstructure of PZT film plays an important role in the improvement of electrical properties. In particular, the change in the grain size of PZT film is responsible for the enhancement of the electrical properties. It was found in this study that films with smaller grain size had larger coercive fields. The exact dependence of the grain size on the hysteretic property is not fully understood at present. However, it is believed that the grain size affects both domain formation and domain pinning because of the influence of grain boundaries. The change in physical properties of PZT films due to the bottom electrode is understood in terms of interfacial modifications. Here we report on a method to modify physical properties of PZT films utilizing interfacial engineering.

Electrical Properties of Lead Lanthanum Titanate Thin-Film Capacitors Prepared by Sol-Gel Method

1995 ◽  
Vol 34 (Part 1, No. 11) ◽  
pp. 6133-6138 ◽  
Author(s):  
Su Jae Lee ◽  
Min Su Jang ◽  
Chae Ryong Cho ◽  
Kwang Yong Kang ◽  
SeokKilHan
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Thin Film Capacitors ◽  
Lanthanum Titanate ◽  
Titanate Thin Film

Polarity Effect and Dielectric Breakdown of Composite Ferroelectric Films as the Dielectric for Electrowetting Systems

2018 ◽  
Vol 281 ◽  
pp. 598-603 ◽  
Author(s):  
Wei Qiang Wang ◽  
Yan Su
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Film ◽  
Ferroelectric Films ◽  
Dc Voltage ◽  
Voltage Polarity ◽  
Voltage Frequency

In this paper, we study the electrical properties and breakdown phenomena of BaTiO3/Teflon composite ferroelectric thin film in electrowetting systems. The experimental results showed that the electrowetting effect and the breakdown voltage depend on DC voltage polarity, and this polarity dependence is closely related to the thickness of the ferroelectric film. Under AC voltages, the breakdown voltage increased directly with voltage frequency. These results are useful for designing reliable EWOD devices with low operation voltages and high robustness.

BiFeO3-doped (K0.5,Na0.5)(Mn0.005,Nb0.995)O3 ferroelectric thin film capacitors for high energy density storage applications

2017 ◽  
Vol 110 (15) ◽  
pp. 152901 ◽  
Author(s):  
Sung Sik Won ◽  
Masami Kawahara ◽  
Lindsay Kuhn ◽  
Vineeth Venugopal ◽  
Jiyeon Kwak ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Density ◽  
Ferroelectric Thin Film ◽  
High Energy ◽  
High Energy Density ◽  
Thin Film Capacitors
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