Thermal conductivity of dc‐plasma assisted chemical vapor deposited diamond films

The in-plane thermal diffusivity of chemical-vapor-deposited diamond films was measured as a function of diamond-growth rate. The films, 0.1–0.4 mm thick, were prepared in microwave-plasma reactor at growth rates ranging from 1 to 10 μm/h. A modification of Ångstöm's method was used to perform the diffusivity measurements. The thermal conductivity calculated from the thermal diffusivity shows an inverse relationship with growth rate. Analyses of Raman spectra indicate that both the line shifts and the line widths of the diamond Raman peak are practically independent of the deposition rate, except for the specimen grown at the highest growth rate.

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The thermal conductivity of chemical‐vapor‐deposited diamond films on silicon

Journal of Applied Physics ◽

10.1063/1.350981 ◽

1992 ◽

Vol 71 (7) ◽

pp. 3143-3146 ◽

Cited By ~ 73

Author(s):

J. E. Graebner ◽

J. A. Mucha ◽

L. Seibles ◽

G. W. Kammlott

Keyword(s):

Thermal Conductivity ◽

Diamond Films ◽

Chemical Vapor ◽

Chemical Vapor Deposited

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ChemInform Abstract: A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction.

ChemInform ◽

10.1002/chin.199732011 ◽

2010 ◽

Vol 28 (32) ◽

pp. no-no

Author(s):

M. S. HAQUE ◽

H. A. NASEEM ◽

A. P. MALSHE ◽

W. D. BROWN

Keyword(s):

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

X Ray Diffraction ◽

Plasma Chemical ◽

X Ray ◽

Chemical Vapor Deposited

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Electrical Characteristics of Chemical Vapor Deposited Diamond Films

phys stat sol (a) ◽

10.1002/pssa.2211540126 ◽

1996 ◽

Vol 154 (1) ◽

pp. 371-384 ◽

Cited By ~ 5

Author(s):

T. Sugino ◽

J. Shirafuji

Keyword(s):

Diamond Films ◽

Chemical Vapor ◽

Electrical Characteristics ◽

Chemical Vapor Deposited

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Crystalline perfection of chemical vapor deposited diamond films

Journal of Materials Research ◽

10.1557/jmr.1990.1591 ◽

1990 ◽

Vol 5 (8) ◽

pp. 1591-1594 ◽

Cited By ~ 55

Author(s):

A. V. Hetherington ◽

C. J. H. Wort ◽

P. Southworth

Keyword(s):

Grain Boundaries ◽

Microwave Plasma ◽

Diamond Films ◽

Stacking Faults ◽

Chemical Vapor ◽

Cvd Diamond ◽

Growth Conditions ◽

Crystalline Perfection ◽

Planar Defects ◽

Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

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Chemical-Vapor-Deposited Materials for High Thermal Conductivity Applications

MRS Bulletin ◽

10.1557/mrs2001.116 ◽

2001 ◽

Vol 26 (6) ◽

pp. 458-463 ◽

Cited By ~ 10

Author(s):

Jitendra S. Goela ◽

Nathaniel E. Brese ◽

Michael A. Pickering ◽

John E. Graebner

Keyword(s):

Thin Film ◽

Thermal Conductivity ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

High Thermal Conductivity ◽

Solid Materials ◽

Chemical Vapor Deposited

Chemical vapor deposition (CVD) is an attractive method for producing bulk and thin-film materials for a variety of applications. In this method, gaseous reagents condense onto a substrate and then react to produce solid materials. The materials produced by CVD are theoretically dense, highly pure, and have other superior properties.

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