Growth-rate dependence of the thermal conductivity of chemical-vapor-deposited diamond

The in-plane thermal diffusivity of chemical-vapor-deposited diamond films was measured as a function of diamond-growth rate. The films, 0.1–0.4 mm thick, were prepared in microwave-plasma reactor at growth rates ranging from 1 to 10 μm/h. A modification of Ångstöm's method was used to perform the diffusivity measurements. The thermal conductivity calculated from the thermal diffusivity shows an inverse relationship with growth rate. Analyses of Raman spectra indicate that both the line shifts and the line widths of the diamond Raman peak are practically independent of the deposition rate, except for the specimen grown at the highest growth rate.

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Electrically induced thermal transient experiments for thermal diffusivity measurements on chemical vapor deposited diamond films

Review of Scientific Instruments ◽

10.1063/1.1148905 ◽

1998 ◽

Vol 69 (5) ◽

pp. 2105-2109 ◽

Cited By ~ 4

Author(s):

E. Wörner ◽

C. Wild ◽

W. Müller-Sebert ◽

M. Füner ◽

M. Jehle ◽

...

Keyword(s):

Thermal Diffusivity ◽

Diamond Films ◽

Chemical Vapor ◽

Diffusivity Measurements ◽

Transient Experiments ◽

Chemical Vapor Deposited ◽

Thermal Transient

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ChemInform Abstract: A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction.

ChemInform ◽

10.1002/chin.199732011 ◽

2010 ◽

Vol 28 (32) ◽

pp. no-no

Author(s):

M. S. HAQUE ◽

H. A. NASEEM ◽

A. P. MALSHE ◽

W. D. BROWN

Keyword(s):

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

X Ray Diffraction ◽

Plasma Chemical ◽

X Ray ◽

Chemical Vapor Deposited

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Crystalline perfection of chemical vapor deposited diamond films

Journal of Materials Research ◽

10.1557/jmr.1990.1591 ◽

1990 ◽

Vol 5 (8) ◽

pp. 1591-1594 ◽

Cited By ~ 55

Author(s):

A. V. Hetherington ◽

C. J. H. Wort ◽

P. Southworth

Keyword(s):

Grain Boundaries ◽

Microwave Plasma ◽

Diamond Films ◽

Stacking Faults ◽

Chemical Vapor ◽

Cvd Diamond ◽

Growth Conditions ◽

Crystalline Perfection ◽

Planar Defects ◽

Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

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The effect of pressure on growth rate and quality of diamond films prepared by microwave plasma chemical vapor deposition

Acta Physica Sinica ◽

10.7498/aps.56.7183 ◽

2007 ◽

Vol 56 (12) ◽

pp. 7183

Author(s):

物理学报

Keyword(s):

Growth Rate ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Effect Of Pressure

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Evolution of surface relief of epitaxial diamond films upon growth resumption by microwave plasma chemical vapor deposition

CrystEngComm ◽

10.1039/c9ce01933b ◽

2020 ◽

Vol 22 (12) ◽

pp. 2138-2146 ◽

Cited By ~ 1

Author(s):

G. Shu ◽

V. G. Ralchenko ◽

A. P. Bolshakov ◽

E. V. Zavedeev ◽

A. A. Khomich ◽

...

Keyword(s):

Vapor Deposition ◽

Surface Relief ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Diamond Growth ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Step Growth ◽

Growth Features

Homoepitaxial diamond growth may proceed with stops and resumptions to produce thick crystals. We found the resumption procedure to take place in a complex way, via a disturbance of step growth features, followed by the recovery after a certain time.

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X-ray Photoelectron Spectroscopy of the Interface Between Diamond Films and Tantalum Substrates

MRS Proceedings ◽

10.1557/proc-317-529 ◽

1993 ◽

Vol 317 ◽

Author(s):

M.M. Waitew ◽

S. Ismat Shah

Keyword(s):

Photoelectron Spectroscopy ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Diamond Growth ◽

Plasma Chemical ◽

X Ray ◽

Plasma Chemical Vapor Deposition ◽

Stages Of Growth ◽

Diamond Peak

ABSTRACTDiamond films were deposited in a microwave plasma chemical vapor deposition (MPCVD) system on Ta substrates using a mixture of hydrogen and methane gases. The films were grown for varying lengths of time to provide samples with no diamond growth to a continuous diamond film. These films were analyzed using X-ray photoelectron spectroscopy (XPS) in order to understand the time dependent interactions between the substrate and the incoming carbon flux. Photoelectron peaks in the Ta 4f, C Is and Ols regions have been analyzed. In the initial stages of growth, a layer of carbide forms on the substrate. As the substrate becomes supersaturated with carbon, graphite starts to form on the surface. A diamond peak begins to appear after about 30 Minutes of deposition.

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A sequential Raman analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition reactor

Journal of Materials Research ◽

10.1557/jmr.1997.0358 ◽

1997 ◽

Vol 12 (10) ◽

pp. 2686-2698 ◽

Cited By ~ 14

Author(s):

L. Fayette ◽

B. Marcus ◽

M. Mermoux ◽

N. Rosman ◽

L. Abello ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Sequential Analysis ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Diamond Growth ◽

Internal Stresses ◽

Nucleation Density ◽

Silicon Substrates

A sequential analysis of the growth of diamond films on silicon substrates in a microwave plasma assisted chemical vapor deposition (CVD) reactor has been performed by Raman spectroscopy. The plasma was switched off during measurements, but the substrate heating was maintained to minimize thermoelastic stresses. The detectivity of the present experimental setup has been estimated to be about a few tens of μmg/cm2. From such a technique, one expects to analyze different aspects of diamond growth on a non-diamond substrate. The evolution of the signals arising from the substrate shows that the scratching treatment used to increase the nucleation density induces an amorphization of the silicon surface. This surface is annealed during the first step of deposition. The evolution of the line shape of the spectra indicates that the non-diamond phases are mainly located in the grain boundaries. The variation of the integrated intensity of the Raman signals has been interpreted using a simple absorption model. A special emphasis was given to the evolution of internal stresses during deposition. It was verified that compressive stresses were generated when coalescence of crystals took place.

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Diamond growth on carbide surfaces using a selective etching technique

Journal of Materials Research ◽

10.1557/jmr.1994.2154 ◽

1994 ◽

Vol 9 (8) ◽

pp. 2154-2163 ◽

Cited By ~ 22

Author(s):

K.J. Grannen ◽

R.P.H. Chang

Keyword(s):

Vapor Deposition ◽

Microwave Plasma ◽

Diamond Films ◽

Chemical Vapor ◽

Diamond Powder ◽

Nucleation And Growth ◽

Diamond Growth ◽

Etching Technique ◽

Diamond Nucleation ◽

Nucleation And Growth Mechanism

Microwave plasma-enhanced chemical vapor deposition of diamond films on silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pretreatment is necessary to grow these films with a (100) faceted surface morphology. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves etching of the noncarbon component of the carbide by atomic fluorine to expose surface carbon atoms and diamond nucleation and growth on these exposed carbon atoms. Hydrogen is necessary in the growth process to limit the rapid etching of the carbide substrates by corrosive fluorine atoms.

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Effect of Two-Step Deposition Process on Morphology and Optical Properties of Nanostructured Diamond Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.651.148 ◽

2013 ◽

Vol 651 ◽

pp. 148-153 ◽

Cited By ~ 2

Author(s):

S. Tipawan Khlayboonme ◽

Wicharn Techitdheera ◽

Warawoot Thowladda

Keyword(s):

Optical Properties ◽

Carbon Content ◽

Microwave Plasma ◽

Plasma Reactor ◽

Diamond Films ◽

Chemical Vapor ◽

Deposition Process ◽

Single Step ◽

Second Step ◽

Step Process

The morphology and optical properties of nanostructured diamond films affected by the two-step deposition process with changing CH4 concentration were investigated. The CH4 concentration was 1% for the first step and 2% for the second step. The films were prepared by chemical vapor deposition in a microwave plasma reactor with a CH4/H2 gas mixture. Nanocrystalline columnar-structured diamond film with lowering of sp2-bonded carbon content was achieved by the two-step deposition process. Unlike that of the single-step process with 1%CH4, the two-step process promoted the morphology to more uniform and smoother film. The two-step process increased the higher grain boundary as well as decreased the sp2-bonded carbon content in the film, as compared with the single-step process with 2%CH4Subscript text.

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