Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

M. Aldegunde; A. Martinez; A. Asenov

doi:10.1063/1.3658856

Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

Journal of Applied Physics ◽

10.1063/1.3658856 ◽

2011 ◽

Vol 110 (9) ◽

pp. 094518 ◽

Cited By ~ 28

Author(s):

M. Aldegunde ◽

A. Martinez ◽

A. Asenov

Keyword(s):

Cross Section ◽

Field Effect ◽

Phonon Scattering ◽

Field Effect Transistors ◽

Function Analysis ◽

Channel Length ◽

Si Nanowire ◽

Length Dependence ◽

Non Equilibrium Green’S Function ◽

Non Equilibrium

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Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106624 ◽

2020 ◽

Vol 145 ◽

pp. 106624

Author(s):

Kien Liong Wong ◽

Mu Wen Chuan ◽

Afiq Hamzah ◽

Shahrizal Rusli ◽

Nurul Ezaila Alias ◽

...

Keyword(s):

Green's Function ◽

Field Effect ◽

Performance Metrics ◽

Field Effect Transistors ◽

Graphene Nanoribbon ◽

Function Approach ◽

Pristine Graphene ◽

Current Transport ◽

Non Equilibrium Green’S Function ◽

Non Equilibrium

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A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

Journal of Applied Physics ◽

10.1063/1.4934682 ◽

2015 ◽

Vol 118 (16) ◽

pp. 164305 ◽

Cited By ~ 18

Author(s):

Ramon B. Salazar ◽

Hesameddin Ilatikhameneh ◽

Rajib Rahman ◽

Gerhard Klimeck ◽

Joerg Appenzeller

Keyword(s):

Green’S Function ◽

Green's Function ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Analytic Model ◽

Tunneling Field Effect Transistors ◽

Non Equilibrium Green’S Function ◽

Non Equilibrium

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Channel length dependence of field-effect mobility ofc-axis-aligned crystalline In–Ga–Zn–O field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.041103 ◽

2015 ◽

Vol 54 (4) ◽

pp. 041103 ◽

Cited By ~ 8

Author(s):

Shinpei Matsuda ◽

Erumu Kikuchi ◽

Yasumasa Yamane ◽

Yutaka Okazaki ◽

Shunpei Yamazaki

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Channel Length ◽

Field Effect Mobility ◽

Length Dependence

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Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism

Journal of Applied Physics ◽

10.1063/1.4918301 ◽

2015 ◽

Vol 117 (16) ◽

pp. 164501 ◽

Cited By ~ 7

Author(s):

A. Price ◽

A. Martinez

Keyword(s):

Green's Function ◽

Field Effect ◽

Field Effect Transistor ◽

Phonon Scattering ◽

Function Formalism ◽

Gaas Nanowire ◽

Effect Transistor ◽

Non Equilibrium Green’S Function ◽

Green's Function Formalism ◽

Non Equilibrium

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Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green’s Function Formalism

Journal of Computational Electronics ◽

10.1007/s10825-004-7080-7 ◽

2004 ◽

Vol 3 (3-4) ◽

pp. 373-377 ◽

Cited By ~ 20

Author(s):

Jing Guo ◽

Supriyo Datta ◽

M. P. Anantram ◽

Mark Lundstrom

Keyword(s):

Carbon Nanotube ◽

Green’S Function ◽

Green's Function ◽

Atomistic Simulation ◽

Field Effect ◽

Field Effect Transistors ◽

Function Formalism ◽

Non Equilibrium Green’S Function ◽

Green's Function Formalism ◽

Non Equilibrium

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Atomistic simulation of carbon nanotube field-effect transistors using non-equilibrium Green's function formalism

Electrical Performance of Electronic Packaging IWCE-04 ◽

10.1109/iwce.2004.1407328 ◽

2004 ◽

Cited By ~ 2

Author(s):

Jing Guo ◽

Datta ◽

Anantram ◽

Lundstrom

Keyword(s):

Carbon Nanotube ◽

Green’S Function ◽

Green's Function ◽

Atomistic Simulation ◽

Field Effect ◽

Field Effect Transistors ◽

Function Formalism ◽

Non Equilibrium Green’S Function ◽

Green's Function Formalism ◽

Non Equilibrium

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Channel length dependence of the 1/fnoise in silicon metal‐oxide‐semiconductor field‐effect transistors. II. Verification of the acceleration 1/fnoise process

Journal of Applied Physics ◽

10.1063/1.341892 ◽

1988 ◽

Vol 64 (2) ◽

pp. 907-912 ◽

Cited By ~ 11

Author(s):

Q. Peng ◽

A. N. Birbas ◽

A. van der Ziel ◽

A. D. van Rheenen ◽

K. Amberiadis

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Length Dependence

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Unusual impact of electron-phonon scattering in Si nanowire field-effect-transistors: A possible route for energy harvesting

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.07.031 ◽

2016 ◽

Vol 97 ◽

pp. 548-555 ◽

Cited By ~ 1

Author(s):

Basudev Nag Chowdhury ◽

Sanatan Chattopadhyay

Keyword(s):

Energy Harvesting ◽

Field Effect ◽

Phonon Scattering ◽

Field Effect Transistors ◽

Si Nanowire ◽

Electron Phonon Scattering

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Electrothermal simulations of Si and III-V nanowire field effect transistors: A non-equilibrium Green's function study

Journal of Applied Physics ◽

10.1063/1.4998681 ◽

2017 ◽

Vol 122 (7) ◽

pp. 074502 ◽

Cited By ~ 6

Author(s):

A. Price ◽

A. Martinez

Keyword(s):

Green’S Function ◽

Green's Function ◽

Field Effect ◽

Field Effect Transistors ◽

Function Study ◽

Non Equilibrium Green’S Function ◽

Non Equilibrium

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A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4820390 ◽

2013 ◽

Vol 114 (10) ◽

pp. 104307 ◽

Cited By ~ 11

Author(s):

N. Seoane ◽

A. Martinez

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Nanowire ◽

Coupled Mode ◽

Mode Space ◽

Non Equilibrium Green’S Function

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