A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors

Non Equilibrium Green’S Function

Oxide Semiconductor ◽

Si Nanowire ◽

Coupled Mode ◽

Mode Space ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors

10.1116/1.3258631 ◽

2010 ◽

Vol 28 (1) ◽

pp. C1G12-C1G17 ◽

Cited By ~ 7

Author(s):

Stefan Flachowsky ◽

Ralf Illgen ◽

Tom Herrmann ◽

Wilfried Klix ◽

Roland Stenzel ◽

...

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Detailed Simulation

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc11 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC11 ◽

Cited By ~ 1

Author(s):

Yunxiang Yang ◽

Gang Du ◽

Ruqi Han ◽

Xiaoyan Liu

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Oxide Semiconductor ◽

Intrinsic Parameter ◽

Intrinsic Parameter Fluctuations

Mobility oscillation by one-dimensional quantum confinement in Si-nanowire metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3187803 ◽

2009 ◽

Vol 106 (3) ◽

pp. 034312 ◽

Cited By ~ 8

Author(s):

Hironori Yoshioka ◽

Naoya Morioka ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Metal Oxide ◽

Quantum Confinement ◽

Field Effect ◽

Oxide Semiconductor ◽

One Dimensional ◽

Si Nanowire

An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures

Physica B Condensed Matter ◽

10.1016/j.physb.2017.06.048 ◽

2017 ◽

Vol 521 ◽

pp. 305-311 ◽

Cited By ~ 1

Author(s):

Eunseon Yu ◽

Seongjae Cho ◽

Byung-Gook Park

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Oxide Semiconductor ◽

Capacitance Voltage ◽

Novel Structures

Self-Aligned and Non-Self-Aligned Contact Metallization in InGaAs Metal–Oxide-Semiconductor Field-Effect Transistors: A Simulation Study

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2297737 ◽

2014 ◽

Vol 61 (3) ◽

pp. 734-741 ◽

Cited By ~ 3

Author(s):

Eugene Y.-J. Kong ◽

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Oxide Semiconductor ◽

Contact Metallization

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc11 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC11

Author(s):

Yunxiang Yang ◽

Gang Du ◽

Ruqi Han ◽

Xiaoyan Liu

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Oxide Semiconductor ◽

Intrinsic Parameter ◽

Intrinsic Parameter Fluctuations

Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3595683 ◽

2011 ◽

Vol 98 (22) ◽

pp. 222104 ◽

Cited By ~ 28

Author(s):

Gento Yamahata ◽

Katsuhiko Nishiguchi ◽

Akira Fujiwara

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Single Electron ◽

Oxide Semiconductor ◽

Accuracy Evaluation ◽

Electron Shuttle ◽

Si Nanowire

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Cost Effective ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Electrical Characteristics

Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Inversion Channel