Novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping and one-dimensional simulation of charge control

1997 ◽  
Vol 82 (11) ◽  
pp. 5843-5858 ◽  
Author(s):  
Syunji Imanaga ◽  
Hiroji Kawai
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Modulation Doping ◽  
One Dimensional ◽  
Charge Control ◽  
Effect Transistor ◽  
Dimensional Simulation

Erratum: Heterostructure field effect transistor with doping dipole in charge control layer

1990 ◽  
Vol 26 (21) ◽  
pp. 1832
Author(s):  
J. Zou ◽  
A. Godinath ◽  
T. Akinwande ◽  
M.S. Shur
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Control ◽  
Effect Transistor ◽  
Control Layer

Heterostructure field effect transistor with doping dipole in charge control layer

1990 ◽  
Vol 26 (14) ◽  
pp. 964
Author(s):  
J. Zou ◽  
A. Gopinath ◽  
T. Akinwande ◽  
M.S. Shur
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Control ◽  
Effect Transistor ◽  
Control Layer

Numerical and Experimental Assessment of Charge Control in III–V Nano-Metal-Oxide-Semiconductor Field-Effect Transistor

2013 ◽  
Vol 13 (2) ◽  
pp. 771-775 ◽  
Author(s):  
Ming Shi ◽  
Jérôme Saint-Martin ◽  
Arnaud Bournel ◽  
Damien Querlioz ◽  
Philippe Dollfus ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Experimental Assessment ◽  
Charge Control ◽  
Effect Transistor

Electronic properties of a one‐dimensional channel field effect transistor formed by molecular beam epitaxial regrowth on patterned GaAs

1993 ◽  
Vol 63 (16) ◽  
pp. 2219-2221 ◽  
Author(s):  
J. H. Burroughes ◽  
M. L. Leadbeater ◽  
M. P. Grimshaw ◽  
R. J. Evans ◽  
D. A. Ritchie ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Field Effect ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
One Dimensional ◽  
Molecular Beam Epitaxial ◽  
Epitaxial Regrowth ◽  
Effect Transistor
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