Characterization of MFIS Structure with Dy-Doped ZrO[sub 2] Buffer Layer

2011 ◽  
Author(s):  
J. H. Im ◽  
G. Z. Ah ◽  
D. H. Han ◽  
B. E. Park ◽  
Jisoon Ihm ◽  
...  
Keyword(s):  
2005 ◽  
Vol 198 (1-3) ◽  
pp. 350-353 ◽  
Author(s):  
Xianfeng Ni ◽  
Liping Zhu ◽  
Zhizhen Ye ◽  
Zhe Zhao ◽  
Haiping Tang ◽  
...  

1996 ◽  
Vol 286 (1-2) ◽  
pp. 107-110 ◽  
Author(s):  
Ching-Ting Lee ◽  
Chi-Yu Wang ◽  
Yeong-Chang Chou

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.


2010 ◽  
Vol 60 (9) ◽  
pp. 1050-1054
Author(s):  
Yun Jeong CHOI ◽  
Min Jeong SHIN ◽  
Hunsoo JEON ◽  
Hyung Soo AHN ◽  
Jiho CHANG ◽  
...  
Keyword(s):  

2020 ◽  
Vol 10 (12) ◽  
pp. 4389 ◽  
Author(s):  
Nunzio Cennamo ◽  
Francesco Arcadio ◽  
Aldo Minardo ◽  
Domenico Montemurro ◽  
Luigi Zeni

In this work, we have compared several configurations of surface plasmon resonance (SPR) sensors based on D-shaped tapered plastic optical fibers (TPOFs). Particularly, the TPOFs used to obtain the SPR sensors are made by a lab-built system based on two motorized linear positioning stages and a heating plate. Preliminarily, a comparative analysis has been carried out between two different configurations, one with and one without a thin buffer layer deposited between the core of TPOFs and the gold film. After this preliminary step, we have used the simpler configuration, obtained without the buffer layer, to realize different SPR D-shaped TPOF sensors. This study could be of interest in SPR D-shaped multimode plastic optical fiber (POF) sensors because, without the tapers, the performances decrease when the POF’s diameter decreases, whereas the performances improve in SPR D-shaped tapered POF sensors, where the diameter decreases in the D-shaped sensing area. The performances of the SPR sensors based on different taper ratios have been analyzed and compared. The SPR-TPOF sensors have been tested using water–glycerin mixtures with refractive indices ranging from 1.332 to 1.381 RIU. According to the theory, the experimental results have demonstrated that, as the taper ratio increases, the sensitivity of the SPR sensor increases as well, while on the contrary the signal-to-noise ratio (SNR) decreases.


1993 ◽  
Vol 68 (4) ◽  
pp. 461-466 ◽  
Author(s):  
N. Bécourt ◽  
B. Cros ◽  
J.L. Ponthenier ◽  
R. Berjoan ◽  
A.M. Papon ◽  
...  
Keyword(s):  

2006 ◽  
Vol 301 ◽  
pp. 65-70 ◽  
Author(s):  
Kazuyuki Suzuki ◽  
Kiyotaka Tanaka ◽  
Tatsuo Kimura ◽  
Kaori Nishizawa ◽  
Takeshi Miki ◽  
...  

The (Y,Yb)MnO3 films were crystallized on Y2O3 layers using alkoxy-derived precursor solutions. As a result of investigation of the effect of the Y2O3 layer on the dielectric properties of the (Y,Yb)MnO3/Y2O3/Si, the crystallographic properties such as the orientation and surface morphology of the (Y,Yb)MnO3 thin films depended on the crystallographic appearance of the insulator layer. Following that, the dielectric properties of the MFIS structures varied. For the construction of excellent MFIS structure, the improvement of the orientation, crystallinity, and surface smoothness of the (Y,Yb)MnO3 film by the optimization of the microstructure and dielectric property of the insulator is necessary.


2001 ◽  
Vol 387 (1-2) ◽  
pp. 231-234 ◽  
Author(s):  
M Munzel ◽  
C Deibel ◽  
V Dyakonov ◽  
J Parisi ◽  
W Riedl ◽  
...  

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