Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer

2005 ◽  
Vol 198 (1-3) ◽  
pp. 350-353 ◽  
Author(s):  
Xianfeng Ni ◽  
Liping Zhu ◽  
Zhizhen Ye ◽  
Zhe Zhao ◽  
Haiping Tang ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Aln Buffer

Synthesis and characterization of Al–N codoped p-type ZnO epitaxial films using high-temperature homo-buffer layer

2006 ◽  
Vol 253 (4) ◽  
pp. 1903-1906 ◽  
Author(s):  
Q.Y. Zhu ◽  
Z.Z. Ye ◽  
G.D. Yuan ◽  
J.Y. Huang ◽  
L.P. Zhu ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Epitaxial Films ◽  
Synthesis And Characterization ◽  
P Type

Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer

2019 ◽  
Vol 494 ◽  
pp. 644-650 ◽  
Author(s):  
Wen-Cheng Ke ◽  
Zhong-Yi Liang ◽  
Solomun Teklahymanot Tesfay ◽  
Chih-Yung Chiang ◽  
Cheng-Yi Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Sapphire Substrate ◽  
Aln Buffer

scholarly journals Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD

2010 ◽  
Vol 46 (6) ◽  
pp. 1606-1612 ◽  
Author(s):  
S. Çörekçi ◽  
M. K. Öztürk ◽  
A. Bengi ◽  
M. Çakmak ◽  
S. Özçelik ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Sapphire Substrate ◽  
Aln Buffer

scholarly journals Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures

1999 ◽  
Vol 4 (S1) ◽  
pp. 423-428
Author(s):  
N.V. Edwards ◽  
A.D. Batchelor ◽  
I.A. Buyanova ◽  
L.D. Madsen ◽  
M.D. Bremser ◽  
...  
Keyword(s):  
Crystal Growth ◽  
High Temperature ◽  
Buffer Layer ◽  
Strain State ◽  
Growth Parameters ◽  
Relaxation Phenomena ◽  
Compressive Stresses ◽  
Aln Buffer ◽  
Nitride Layers

We have developed a method to modulate the strain state (normally > 4 kbar, tensile) of moderately thick (∼2 μm) GaN based structures grown on 6H-SiC to a range 0 to -2 kbar of compressive stresses by introducing a strain-mediating layer (SML) above the standard high-temperature AlN buffer layer. The strain characteristics of subsequently deposited nitride layers can be modulated by changing the growth parameters of the SML layer. This is achieved by in-situ techiniques during crystal growth without degrading the optical and structural properties of the deposited layers.

Sign in / Sign up

Export Citation Format

Share Document