n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed
Influence of metal assisted chemical etching time period on mesoporous structure in as-cut upgraded metallurgical grade silicon for solar cell application