scholarly journals Influence of metal assisted chemical etching time period on mesoporous structure in as-cut upgraded metallurgical grade silicon for solar cell application

2019 ◽  
Vol 30 (9) ◽  
pp. 8676-8685 ◽  
Author(s):  
Ragavendran Venkatesan ◽  
Jeyanthinath Mayandi ◽  
Joshua M. Pearce ◽  
Vishnukanthan Venkatachalapathy
Keyword(s):  
Solar Cell ◽  
Chemical Etching ◽  
Mesoporous Structure ◽  
Etching Time ◽  
Metallurgical Grade Silicon ◽  
Solar Cell Application ◽  
Time Period ◽  
Metal Assisted Chemical Etching ◽  
Grade Silicon ◽  
Upgraded Metallurgical Grade Silicon

A 12%-Efficient Upgraded Metallurgical Grade Silicon–Organic Heterojunction Solar Cell Achieved by a Self-Purifying Process

ACS Nano ◽  
2014 ◽  
Vol 8 (11) ◽  
pp. 11369-11376 ◽  
Author(s):  
Jie Zhang ◽  
Tao Song ◽  
Xinlei Shen ◽  
Xuegong Yu ◽  
Shuit-Tong Lee ◽  
...  
Keyword(s):  
Solar Cell ◽  
Heterojunction Solar Cell ◽  
Metallurgical Grade Silicon ◽  
Grade Silicon ◽  
Upgraded Metallurgical Grade Silicon

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

scholarly journals Preparation of Textured Surfaces on Aluminum-Alloy Substrates

Materials ◽  
2018 ◽  
Vol 12 (1) ◽  
pp. 109 ◽  
Author(s):  
Markéta Kadlečková ◽  
Antonín Minařík ◽  
Petr Smolka ◽  
Aleš Mráček ◽  
Erik Wrzecionko ◽  
...  
Keyword(s):  
Aluminum Alloy ◽  
Tensile Testing ◽  
Chemical Etching ◽  
Etching Time ◽  
Textured Surface ◽  
Initial Surface ◽  
Textured Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Time Period

The ways of producing porous-like textured surfaces with chemical etching on aluminum-alloy substrates were studied. The most appropriate etchants, their combination, temperature, and etching time period were explored. The influence of a specifically textured surface on adhesive joints’ strength or superhydrophobic properties was evaluated. The samples were examined with scanning electron microscopy, profilometry, atomic force microscopy, goniometry, and tensile testing. It was found that, with the multistep etching process, the substrate can be effectively modified and textured to the same morphology, regardless of the initial surface roughness. By selecting proper etchants and their sequence one can prepare new types of highly adhesive or even superhydrophobic surfaces.

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

Sign in / Sign up

Export Citation Format

Share Document