Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric

2013 ◽  
Vol 102 (17) ◽  
pp. 173501 ◽  
Author(s):  
Alexander C. Kozen ◽  
Marshall A. Schroeder ◽  
Kevin D. Osborn ◽  
C. J. Lobb ◽  
Gary W. Rubloff
Keyword(s):  
Atomic Layer ◽  
Electrical Performance ◽  
Metal Insulator ◽  
Fabricated Metal ◽  
Metal Insulator Metal

scholarly journals Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

RSC Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 5158-5165 ◽  
Author(s):  
Y.-R. Jo ◽  
S.-H. Myeong ◽  
B.-J. Kim
Keyword(s):  
Sol Gel ◽  
Insulator Transition ◽  
In Situ Characterization ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Nanowire Device ◽  
Sol Gel Synthesis

The single-VO2 nanowire device synthesized via sequential morphological evolutions with oxygen reduction during annealing features a sharp metal-insulator transition.

Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

2012 ◽  
Vol 520 (14) ◽  
pp. 4576-4579 ◽  
Author(s):  
M. Lukosius ◽  
C. Baristiran Kaynak ◽  
S. Kubotsch ◽  
T. Blomberg ◽  
G. Ruhl ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Atomic Vapor ◽  
Metal Insulator ◽  
Metal Insulator Metal

scholarly journals Correction: Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

RSC Advances ◽  
2018 ◽  
Vol 8 (56) ◽  
pp. 31984-31984
Author(s):  
Y.-R. Jo ◽  
S.-H. Myeong ◽  
B.-J. Kim
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Insulator Transition ◽  
In Situ Characterization ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Sol Gel Synthesis

Correction for ‘Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition’ by Y.-R. Jo et al., RSC Adv., 2018, 8, 5158–5165.

Improved interface quality of atomic-layer-deposited ZrO2 metal-insulator-metal capacitors with Ru bottom electrodes

2020 ◽  
Vol 701 ◽  
pp. 137950 ◽  
Author(s):  
Jae Hwan Lee ◽  
Bo-Eun Park ◽  
David Thompson ◽  
Myeonggi Choe ◽  
Zonghoon Lee ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Interface Quality ◽  
Metal Insulator ◽  
Metal Insulator Metal
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