Pi-gate tunneling field-effect transistor charge trapping nonvolatile memory based on all tunneling transportation

2013 ◽  
Vol 103 (5) ◽  
pp. 053118 ◽  
Author(s):  
Yi-Ruei Jhan ◽  
Yung-Chun Wu ◽  
Hsin-Yi Lin ◽  
Min-Feng Hung
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Effect Transistor ◽  
Gate Tunneling

A nonvolatile memory element based on a quaterthiophene field-effect transistor

2005 ◽  
Vol 59 (10) ◽  
pp. 1165-1168 ◽  
Author(s):  
K.N. Narayanan Unni ◽  
Remi de Bettignies ◽  
Sylvie Dabos-Seignon ◽  
Jean-Michel Nunzi
Keyword(s):  
Nonvolatile Memory ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Element ◽  
Effect Transistor

Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

2019 ◽  
Vol 28 (8) ◽  
pp. 086801 ◽  
Author(s):  
Wen-Ting Zhang ◽  
Fen-Xia Wang ◽  
Yu-Miao Li ◽  
Xiao-Xing Guo ◽  
Jian-Hong Yang
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Floating Gate ◽  
Organic Field Effect Transistor ◽  
Floating Gate Memory ◽  
Effect Transistor

Understanding charge trapping/detrapping at the zinc oxide (ZnO)/MAPbI3 perovskite interface in the dark and under illumination using a ZnO/perovskite/ZnO test platform

Nanoscale ◽  
2018 ◽  
Vol 10 (43) ◽  
pp. 20377-20383 ◽  
Author(s):  
Youngjun Kim ◽  
Byoungnam Park
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Lead Iodide ◽  
Test Platform ◽  
Interfacial Contact ◽  
Effect Transistor ◽  
Methylammonium Lead Iodide

We fabricated a zinc oxide (ZnO)/methylammonium lead iodide (MAPbI3) perovskite/ZnO field effect transistor (FET) test platform device through which ZnO/perovskite interfacial contact properties can be probed in the dark and under illumination.

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