Localized excess negative charges in surface states of the clean Ga-rich GaAs(100)c(8×2)/4×2 reconstruction as imaged by scanning tunneling microscopy

2000 ◽  
Vol 113 (6) ◽  
pp. 2060-2063 ◽  
Author(s):  
Peter Kruse ◽  
James G. McLean ◽  
Andrew C. Kummel
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface States ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Multilayered silicene: the bottom-up approach for a weakly relaxed Si(111) with Dirac surface states

Nanoscale ◽  
2015 ◽  
Vol 7 (38) ◽  
pp. 15880-15885 ◽  
Author(s):  
Huixia Fu ◽  
Lan Chen ◽  
Jian Chen ◽  
Jinglan Qiu ◽  
Zijing Ding ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
First Principles ◽  
Van Der Waals ◽  
Surface States ◽  
Scanning Tunneling ◽  
Diamond Structure ◽  
Tunneling Microscopy ◽  
Bottom Up

Combining first principles investigations and scanning tunneling microscopy, we identify that the presumable van der Waals packed multilayered silicene sheets spontaneously transform into a diamond-structure bulk Si film due to strong interlayer couplings.

scholarly journals Scanning tunneling microscopy of superconducting topological surface states inBi2Se3

2016 ◽  
Vol 93 (22) ◽  
Author(s):  
Ian M. Dayton ◽  
Nicholas Sedlmayr ◽  
Victor Ramirez ◽  
Thomas C. Chasapis ◽  
Reza Loloee ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface States ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Topological Surface

Depth Dependence of Dopant Induced Features on The Si(100)2x1:H Surface and Its Application for Three Dimensional Dopant Profiling

2001 ◽  
Vol 699 ◽  
Author(s):  
Lequn Liu ◽  
Jixin Yu ◽  
Joseph W. Lyding
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Electronic Device ◽  
Three Dimensional ◽  
Surface States ◽  
Scanning Tunneling ◽  
Dopant Atom ◽  
Tunneling Microscopy ◽  
Dopant Profiling ◽  
Device Structures ◽  
Subsurface Layers

AbstractThe lack of surface states within the band gap of the perfect Si(100)2x1:H surface opens the way to scanning tunneling microscopy studies of dopant atom sites in Si(100). In this paper, Boron and Arsenic induced features are studied by ultrahigh vacuum scanning tunneling microscopy. The values of their amplitudes naturally group such that several subsurface layers can be identified. This technique for producing atom-resolved three-dimensional maps of electrically active dopants in silicon may be a useful metric for characterizing dopant profiles in ultra-small electronic device structures.

Scanning tunneling microscopy investigations of unoccupied surface states in two-dimensional semiconducting β-√3 × √3-Bi/Si(111) surface

2018 ◽  
Vol 20 (30) ◽  
pp. 20188-20193 ◽  
Author(s):  
Jian Gou ◽  
Long-Juan Kong ◽  
Wen-Bin Li ◽  
Shao-Xiang Sheng ◽  
Hui Li ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface States ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscopy

The lowest unoccupied states with Rashba splitting of β-√3 × √3-Bi are proved to be contributed by surface bismuth atoms.

Surface states of d character imaged by scanning tunneling microscopy

2001 ◽  
Vol 491 (1-2) ◽  
pp. 39-47 ◽  
Author(s):  
Z. Song ◽  
J.I. Pascual ◽  
H. Conrad ◽  
K. Horn ◽  
H.-P. Rust
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Surface States ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

A study on α-RuCl3 crystal structure by scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 30-31
Author(s):  
H.-J. Cantow ◽  
H. Hillebrecht ◽  
S. Magonov ◽  
H. W. Rotter ◽  
G. Thiele
Keyword(s):  
Crystal Structure ◽  
Density Distribution ◽  
Scanning Tunneling Microscopy ◽  
Electron Density ◽  
Structure Determination ◽  
Electron Density Distribution ◽  
Scanning Tunneling ◽  
Monoclinic Space Group ◽  
Tunneling Microscopy ◽  
X Ray

From X-ray analysis, the conclusions are drawn from averaged molecular informations. Thus, limitations are caused when analyzing systems whose symmetry is reduced due to interatomic interactions. In contrast, scanning tunneling microscopy (STM) directly images atomic scale surface electron density distribution, with a resolution up to fractions of Angstrom units. The crucial point is the correlation between the electron density distribution and the localization of individual atoms, which is reasonable in many cases. Thus, the use of STM images for crystal structure determination may be permitted. We tried to apply RuCl3 - a layered material with semiconductive properties - for such STM studies. From the X-ray analysis it has been assumed that α-form of this compound crystallizes in the monoclinic space group C2/m (AICI3 type). The chlorine atoms form an almost undistorted cubic closed package while Ru occupies 2/3 of the octahedral holes in every second layer building up a plane hexagon net (graphite net). Idealizing the arrangement of the chlorines a hexagonal symmetry would be expected. X-ray structure determination of isotypic compounds e.g. IrBr3 leads only to averaged positions of the metal atoms as there exist extended stacking faults of the metal layers.

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