Depth Dependence of Dopant Induced Features on The Si(100)2x1:H Surface and Its Application for Three Dimensional Dopant Profiling

2001 ◽  
Vol 699 ◽  
Author(s):  
Lequn Liu ◽  
Jixin Yu ◽  
Joseph W. Lyding
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Electronic Device ◽  
Three Dimensional ◽  
Surface States ◽  
Scanning Tunneling ◽  
Dopant Atom ◽  
Tunneling Microscopy ◽  
Dopant Profiling ◽  
Device Structures ◽  
Subsurface Layers

AbstractThe lack of surface states within the band gap of the perfect Si(100)2x1:H surface opens the way to scanning tunneling microscopy studies of dopant atom sites in Si(100). In this paper, Boron and Arsenic induced features are studied by ultrahigh vacuum scanning tunneling microscopy. The values of their amplitudes naturally group such that several subsurface layers can be identified. This technique for producing atom-resolved three-dimensional maps of electrically active dopants in silicon may be a useful metric for characterizing dopant profiles in ultra-small electronic device structures.

Self-Assembled InAs Islands on (AI,Ga)As, an In Situ Scanning Tunneling Microscopy Study

1999 ◽  
Vol 571 ◽  
Author(s):  
P. Ballet ◽  
J.B. Smathers ◽  
G.J. Salamo
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Self Organized ◽  
Scanning Tunneling Microscopy Study ◽  
Island Density

ABSTRACTWe report an in-situ molecular beam epitaxy – scanning tunneling microscopy study of three dimensional (3D) self organized InAs islands on (AI,Ga)As surfaces. The influence of the presence of Al atoms on the roughness of the starting surface and on the island density is shown by investigating several Al compositions. We emphasize the case of InAs/AlAs and point out the major differences between this system and the widely studied InAs/GaAs system.

Relaxation of Nanostructures on the Si(111)(7×7) Surface by High Temperature Scanning Tunneling Microscopy

1998 ◽  
Vol 05 (03n04) ◽  
pp. 821-832 ◽  
Author(s):  
Ayahiko Ichimiya ◽  
Yoriko Tanaka ◽  
Kazuhiko Hayashi
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Three Dimensional ◽  
Thermal Relaxation ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Tunneling Microscopy ◽  
Temperature Variable ◽  
Long Lifetime ◽  
Temperature Scanning ◽  
Silicon Islands

Single silicon islands have been produced on the Si(111)(7 × 7) surface by a scanning tunneling microscope (STM) tip. Thermal relaxation of the isolated islands is observed by temperature variable scanning tunneling microscopy with strong tip effects. The sizes of islands depend on time t with a functional form of (t0-t)α. It is found that α≃2/3 for single bilayer islands, and α≃1 for three-dimensional ones. During the decomposition of three-dimensional islands, step bunching of over-layers takes place, while the islands have certain facets, like a pyramid just after the creation. At the final stages of the three-dimensional island decompositions, two-dimensional ones with 5 × 5 structure always appear. We have found that characteristic 5 × 5 islands with a long lifetime are formed during relaxation, but the 7 × 7 islands have mostlt a short lifetime. Rotation of small islands is also observed during relaxation. We discuss the results in terms of two-dimensional vapor phase processes.

ON THE ROLE OF KINKS AND STRAIN IN HETEROEPITAXIAL GROWTH: AN STM STUDY

2000 ◽  
Vol 07 (05n06) ◽  
pp. 673-677
Author(s):  
E. LUNDGREN ◽  
M. SCHMID ◽  
G. LEONARDELLI ◽  
A. HAMMERSCHMID ◽  
B. STANKA ◽  
...  
Keyword(s):  
Diffusion Process ◽  
Scanning Tunneling Microscopy ◽  
Three Dimensional ◽  
Growth Mode ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Heteroepitaxial Growth ◽  
Tunneling Microscopy ◽  
Exchange Diffusion

Interlayer diffusion of Co over steps of vacancy islands on the Pt(111) surface as studied by scanning tunneling microscopy is presented. It is demonstrated that Co atoms descend Pt steps by an exchange diffusion process at the step edge with the Pt atoms. Further, the exchange diffusion process is observed to occur at the corners (kinks) of the vacancy islands. The importance of kinks concerning whether the growth mode of a heteropitaxial film is two-dimensional or three-dimensional is demonstrated for the case of thin Co films on Pt(111). We argue that the strain in the Co film is to a large extent responsible for the kink formation.

Growth of Laser Ablated YBa2Cu3O7−δ Films as Examined by Rheed and Scanning Tunneling Microscopy

1992 ◽  
Vol 285 ◽  
Author(s):  
Stephen E. Russek ◽  
Alexana Roshko ◽  
Steven C. Sanders ◽  
David A. Rudman ◽  
J. W. Ekin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Scanning Tunneling Microscopy ◽  
Three Dimensional ◽  
High Energy ◽  
Spiral Growth ◽  
Scanning Tunneling ◽  
Initial Growth ◽  
Rheed Pattern ◽  
Island Growth ◽  
Tunneling Microscopy

ABSTRACTUsing scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED) we have examined the growth morphology, surface structure, and surface degradation of laser ablated YBa2Cu3O7−δ thin films. Films from 5 nm to ltm thick were studied. The films were deposited on MgO and LaAlO3 substrates using two different excimer laser ablation systems. Both island nucleated and spiral growth morphologies were observed depending on the substrate material and deposition rate used. The initial growth mechanism observed for a 5–10 nm thick film is replicated through different growth layers up to thicknesses of 200 run. Beyond 200 rnm, the films show some a-axis grains and other outgrowths. The thinnest films (5–10 nm) show considerable surface roughness on the order of 3–4 nm. For both growth mechanisms the ledge width remains approximately constant (∼ 30 nm) and the surface roughness increases as the film thickness increases. The films with spiral growth have streaked RHEED patterns despite having considerable surface roughness, while the films with island growth have more of a three dimensional diffraction pattern. RHEED patterns were obtained after the film surfaces were degraded by exposure to air, KOH developer, a Br-methanol etch, and a shallow ion mill. Exposure to air and KOH developer caused only moderate degradation of the RHEED pattern whereas a shallow (I nm deep) 300 V ion mill completely destroyed the RHEED pattern.

Scanning Tunneling Microscopy Study of α,ω-Dihexylsexithiophene Adlayers on Au(111): A Chiral Separation Induced by a Surface

2012 ◽  
Vol 18 (4) ◽  
pp. 885-891 ◽  
Author(s):  
Yonghai Song ◽  
Yu Wang ◽  
Lingli Wan ◽  
Shuhong Ye ◽  
Haoqing Hou ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Self Assembly ◽  
Room Temperature ◽  
Three Dimensional ◽  
Microscopy Study ◽  
Molecular Structures ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Left Handed ◽  
Bulk Structure

AbstractThe self-assembly of α,ω-dihexylsexithiophene molecules on an Au(111) surface was examined by using scanning tunneling microscopy at room temperature, revealing the internal molecular structures of the sexithiophene backbones and the hexyl side chains. The α,ω-dihexylsexithiophene formed a large and well-ordered monolayer in which the molecule lay flatly on the Au(111) surface and was separated into two chiral domains. A detailed observation reveals that the admolecules were packed in one lamellae with their molecular axis aligned along the main axis of the Au(111) substrate with their hexyl chains deviated from ⟨110⟩ direction of the Au(111) substrate by 12 ± 0.5°. In contrast to the behavior in the three-dimensional bulk structure, flat-lying adsorption introduced molecular chirality: right- and left-handed molecules separate into domains of two different orientations, which are mirror symmetric with respect to the ⟨121⟩ direction of the Au(111) substrate. Details of the adlayer structure and the chiral self-assembly were discussed here.

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