Extracted ion current density in close-coupling multi-antenna type radio frequency driven ion source: CC-MATIS

2014 ◽  
Vol 85 (2) ◽  
pp. 02B310
Author(s):  
Y. Oka ◽  
T. Shoji
1993 ◽  
Vol 316 ◽  
Author(s):  
B.X. Liu ◽  
D.H. Zhu ◽  
H.B. Lu ◽  
K. Tao

ABSTRACTMetal Vapour Vacuum Arc (MEWA) Ion Source was employed, for the first time, to synthesize metal suicides. Refractory metal suicides NbSi2, TaSi2, WSi2 and MoSi2 were successfully formed by implanting respective metal ions into Si(111) wafers. It was found that the high current density metal ion implantation not only provided the metal components but also caused a simultaneous annealing for various metal-suicide phases to grow. When the impLantation was conducted at 40 kV, the Nb ion current density was up to 76 µA/cm2 at a dose of 4x1017/cm 2, and the Ta, W and Mo ion current densities were up to 65 µA/cm2 at a dose of 5×1017 ions/cm2 , hexagonal NbSi2, TaSi2, MoSi2 and WSi2 were formed. Post annealing transformed the WSi2 and MoSi2 phases from hexagonal to tetragonal structure, featuring lower resistance than that of the as-implanted ones.


2006 ◽  
Vol 77 (3) ◽  
pp. 03C107 ◽  
Author(s):  
F. Scholze ◽  
H. Neumann ◽  
M. Tartz ◽  
J. Dienelt ◽  
H. Schlemm

1993 ◽  
Vol 320 ◽  
Author(s):  
B.X. Liu ◽  
D.H. Zhu ◽  
H.B. Lu ◽  
K. Tao

ABSTRACTMetal Vapour Vacuum Arc (MEVVA) Ion Source was employed, for the first time, to synthesize metal silicides. Refractory metal silicides NbSi2, TaSi2, WSi2 and MoSi2; were successfully formed by implanting respective metal ions into Si(111) wafers. It was found that the high current density metal ion implantation not only provided the metal components but also caused a simultaneous annealing for various metal-silicide phases to grow. When the imp ytation was conducted at 40 kV, the Nb ion current density was up to 76 μA/cm at a dose of 4×1011/cm2, and the Ta, W and Mo ion current densities were up to 65 μA/cm2 at a dose of 5×1017 ions/cm2, hexagonal NbSi2, TaSi2, MoSi2 and WSi2 were formed. Post annealing transformed the WSi2 and MoSi2 phases from hexagonal to tetragonal structure, featuring lower resistance than that of the as-implanted ones.


2004 ◽  
Vol 78 (7) ◽  
pp. 1067-1072 ◽  
Author(s):  
V.N. Popok ◽  
I.I. Azarko ◽  
R.I. Khaibullin ◽  
A.L. Stepanov ◽  
V. Hnatowicz ◽  
...  

Aerospace ◽  
2020 ◽  
Vol 7 (5) ◽  
pp. 58
Author(s):  
Thibault Hallouin ◽  
Stéphane Mazouffre

The 100 W-class ISCT100-v2 Hall Thruster (HT) has been characterized in terms of far-field plume properties. By means of a Faraday Cup and a Retarding Potential Analyzer, both the ion current density and the ion energy distribution function have been measured over a 180 ∘ circular arc for different operating points. Measurements are compared to far-field plume characterizations performed with higher power Hall thrusters. The ion current density profiles remain unchanged whatever the HT input power, although an asymptotic limit is observed in the core of the plume at high discharge voltages and anode mass flow rates. In like manner, the ion energy distribution functions reveal that most of the beam energy is concentrated in the core of the plume [ − 40 ∘ ; 40 ∘ ] . Moreover, the fraction of low energy ion populations increases at large angles, owing to charge exchange and elastic collisions. Distinct plume regions are identified; they remain similar to the one described for high-power HTs. An efficiency analysis is also performed in terms of current utilization, mass utilization, and voltage utilization. The anode efficiency appears to be essentially affected by a low voltage utilization, the latter originating from the large surface-to-volume ratio inherent to low-power HTs. Experimental results also show that the background pressure clearly affects the plume structure and content.


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