scholarly journals Fabrication and characterization of sub-100/10 nm planar nanofluidic channels by triple thermal oxidation and silicon-glass anodic bonding

2014 ◽  
Vol 8 (5) ◽  
pp. 052106 ◽  
Author(s):  
Wei Ouyang ◽  
Wei Wang
Keyword(s):  
Thermal Oxidation ◽  
Anodic Bonding ◽  
Nanofluidic Channels ◽  
Fabrication And Characterization

Fabrication and characterization of GaN/amorphous Ga2O3 nanocables through thermal oxidation

2007 ◽  
Vol 142 (8) ◽  
pp. 437-440 ◽  
Author(s):  
Ji-Hyuk Choi ◽  
Moon-Ho Ham ◽  
Woong Lee ◽  
Jae-Min Myoung
Keyword(s):  
Thermal Oxidation ◽  
Fabrication And Characterization

Fabrication and characterization of silicon nanocrystals by thermal oxidation of a-Si:H films in air

2003 ◽  
Vol 21 (2) ◽  
pp. 719 ◽  
Author(s):  
Sandeep Kohli ◽  
Jeremy A. Theil ◽  
Rick. D. Snyder ◽  
Christopher D. Rithner ◽  
Peter K. Dorhout
Keyword(s):  
Thermal Oxidation ◽  
Silicon Nanocrystals ◽  
Fabrication And Characterization

Fabrication and Characterization of ZnO Nanowires by Thermal Oxidation Method

2012 ◽  
Vol 585 ◽  
pp. 124-128 ◽  
Author(s):  
Divya Somvanshi ◽  
Satyabrata Jit
Keyword(s):  
Electron Microscope ◽  
Thermal Oxidation ◽  
Present Method ◽  
Zno Nanowires ◽  
Metal Foil ◽  
Oxidation Method ◽  
Si Substrates ◽  
Fabrication And Characterization ◽  
Scanning Electron

Fabrication of ZnO nanowires (NWs) by thermal oxidation method has been studied in this work. The ZnO NWs have been grown by oxidation of Zn metal foil under oxygen environment for two typical oxidation durations. We have investigated the behavior of the as-grown ZnO NWs with the change in oxidation duration at particular temperature. The changes in surface morphology and chemical composition with the variation of oxidation duration have been analyzed by scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) respectively. From EDS spectra, it is confirmed that Zn metal has completely oxidized into ZnO for higher oxidation duration. In this work, the optimized duration of oxidation for growth of ZnO NWs is found to be ~60 minutes at particular temperature of 600oC. The present method provides a possible mechanism for the growth of ZnO NWs on the p-Si substrates.

Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FE19 ◽  
Author(s):  
Takahiro Kamei ◽  
Yongxun Liu ◽  
Takashi Matsukawa ◽  
Kazuhiko Endo ◽  
Shinichi O'uchi ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Flash Memory ◽  
Dielectric Layer ◽  
Rapid Thermal Oxidation ◽  
Fabrication And Characterization

Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation

2012 ◽  
Vol 51 ◽  
pp. 06FE19 ◽  
Author(s):  
Takahiro Kamei ◽  
Yongxun Liu ◽  
Takashi Matsukawa ◽  
Kazuhiko Endo ◽  
Shinichi O'uchi ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Flash Memory ◽  
Dielectric Layer ◽  
Rapid Thermal Oxidation ◽  
Fabrication And Characterization

Fabrication and Characterization of Polyoxometalate based Nano-hybrids: Evaluation of their role in Biological Activity

2019 ◽  
Vol 35 (4) ◽  
pp. 475-484
Author(s):  
SHIVA ARUN ◽  
◽  
PRABHA BHARTIYA ◽  
AMREEN NAZ ◽  
SUDHEER RAI ◽  
...  
Keyword(s):  
Biological Activity ◽  
Fabrication And Characterization
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