scholarly journals Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

AIP Advances ◽  
2015 ◽  
Vol 5 (1) ◽  
pp. 017116 ◽  
Author(s):  
Meng-Fang Lin ◽  
Xu Gao ◽  
Nobuhiko Mitoma ◽  
Takio Kizu ◽  
Wei Ou-Yang ◽  
...  
2008 ◽  
Vol 130 (38) ◽  
pp. 12580-12581 ◽  
Author(s):  
Hyun Sung Kim ◽  
Paul D. Byrne ◽  
Antonio Facchetti ◽  
Tobin J. Marks

2019 ◽  
Vol 58 (9) ◽  
pp. 090506 ◽  
Author(s):  
Shinya Aikawa ◽  
Toshihide Nabatame ◽  
Kazuhito Tsukagoshi

2019 ◽  
Vol 66 (3) ◽  
pp. 1302-1307 ◽  
Author(s):  
Xuyang Li ◽  
Jin Cheng ◽  
Yonghua Chen ◽  
Yunfei He ◽  
Yan Li ◽  
...  

2016 ◽  
Vol 4 (10) ◽  
pp. 2072-2078 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  

Facile patterning of chloride-based precursor films for low-temperature, high performance indium oxide thin-film transistors.


Sign in / Sign up

Export Citation Format

Share Document