Structural and luminescence properties of heavily doped radio-frequency-sputtered ZnTe:Cu thin films

2015 ◽  
Vol 118 (9) ◽  
pp. 095706 ◽  
Author(s):  
Fikry El Akkad ◽  
Maneesh Mathai
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Luminescence Properties ◽  
Heavily Doped

Effect of Post-Annealing Treatment on the Structure and Luminescence Properties of AIN:Tb3+ Thin Films Prepared by Radio Frequency Magnetron Sputtering

2017 ◽  
Vol 890 ◽  
pp. 299-302 ◽  
Author(s):  
Karem Yoli Tucto Salinas ◽  
Loreleyn F. Flores Escalante ◽  
Jorge Andrés Guerra Torres ◽  
Rolf Grieseler ◽  
Thomas Kups ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Radio Frequency Magnetron ◽  
Luminescence Properties ◽  
Aluminum Oxynitride ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray

Terbium-doped aluminum nitride thin films have been deposited by radio frequency magnetron sputtering. The influence of annealing treatments on structural, morphological and luminescence properties of the films is examined with the aim to optimize post-deposition annealing conditions. Temperatures starting from 500 up to 1000°C using two annealing techniques were investigated: rapid thermal processing and quartz tube furnace. X-ray diffraction analysis revealed the formation of aluminum oxide and aluminum oxynitride phases at temperatures higher than 750°C. The oxygen content in the surface layer was measured with energy dispersive X-ray. The terbium emission was obtained after excitation either by photons or electrons. The films treated with rapid thermal processing at 750°C resulted in the highest emission.

Luminescence Properties and energy transfer mechanism of Eu3+ and Tm3+ Co-doped AlN Thin Films

2021 ◽  
pp. 118082
Author(s):  
Hai Ma ◽  
Xiaodan Wang ◽  
Feifei Chen ◽  
Jiafan Chen ◽  
Xionghui Zeng ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Transfer ◽  
Transfer Mechanism ◽  
Luminescence Properties ◽  
Energy Transfer Mechanism ◽  
Co Doped

Tunable optoelectronic properties of radio frequency sputter-deposited Sb2Se3 thin films: Role of growth angle and thickness

Solar Energy ◽  
2019 ◽  
Vol 194 ◽  
pp. 716-723
Author(s):  
Alapan Dutta ◽  
Ranveer Singh ◽  
Sanjeev Kumar Srivastava ◽  
Tapobrata Som
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Optoelectronic Properties ◽  
Growth Angle ◽  
Sputter Deposited

Growth and characterization of radio frequency magnetron sputter-deposited zinc stannate, Zn2SnO4, thin films

2002 ◽  
Vol 92 (1) ◽  
pp. 310-319 ◽  
Author(s):  
David L. Young ◽  
Helio Moutinho ◽  
Yanfa Yan ◽  
Timothy J. Coutts
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Zinc Stannate ◽  
Magnetron Sputter ◽  
Sputter Deposited

Nitrogen Doping into Cu2O Thin Films Deposited by Reactive Radio-Frequency Magnetron Sputtering

2001 ◽  
Vol 40 (Part 1, No. 4B) ◽  
pp. 2765-2768 ◽  
Author(s):  
Shogo Ishizuka ◽  
Shinya Kato ◽  
Takahiro Maruyama ◽  
Katsuhiro Akimoto
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Nitrogen Doping ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Cu2o Thin Films

Radio‐Frequency Reactively Sputtered  VO  x Thin Films Deposited at Different Oxygen Flows

1998 ◽  
Vol 145 (2) ◽  
pp. 706-711 ◽  
Author(s):  
A. Lourenço ◽  
A. Gorenstein ◽  
S. Passerini ◽  
W. H. Smyrl ◽  
M. C. A. Fantini ◽  
...  
Keyword(s):  
Thin Films ◽  
Radio Frequency
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