scholarly journals Industry-relevant magnetron sputtering and cathodic arc ultra-high vacuum deposition system for in situ x-ray diffraction studies of thin film growth using high energy synchrotron radiation

2015 ◽  
Vol 86 (9) ◽  
pp. 095113 ◽  
Author(s):  
J. L. Schroeder ◽  
W. Thomson ◽  
B. Howard ◽  
N. Schell ◽  
L.-Å. Näslund ◽  
...  
Keyword(s):  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Thin Film Growth ◽  
Ultra High Vacuum ◽  
Vacuum Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cathodic Arc

Modifications of a JEOL 2000EX TEM for insSitu surface studies

1993 ◽  
Vol 51 ◽  
pp. 640-641
Author(s):  
Michael T. Marshall ◽  
Xianghong Tong ◽  
J. Murray Gibson
Keyword(s):  
Electron Diffraction ◽  
Surface Science ◽  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Transmission Electron ◽  
Fundamental Insight

We have modified a JEOL 2000EX Transmission Electron Microscope (TEM) to allow in-situ ultra-high vacuum (UHV) surface science experiments as well as transmission electron diffraction and imaging. Our goal is to support research in the areas of in-situ film growth, oxidation, and etching on semiconducter surfaces and, hence, gain fundamental insight of the structural components involved with these processes. The large volume chamber needed for such experiments limits the resolution to about 30 Å, primarily due to electron optics. Figure 1 shows the standard JEOL 2000EX TEM. The UHV chamber in figure 2 replaces the specimen area of the TEM, as shown in figure 3. The chamber is outfitted with Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), Residual Gas Analyzer (RGA), gas dosing, and evaporation sources. Reflection Electron Microscopy (REM) is also possible. This instrument is referred to as SHEBA (Surface High-energy Electron Beam Apparatus).The UHV chamber measures 800 mm in diameter and 400 mm in height. JEOL provided adapter flanges for the column.

UHV In-Situ Electron Microscopy of thin Film Growth

1976 ◽  
Vol 34 ◽  
pp. 442-443
Author(s):  
K. Yagi ◽  
K. Takayanagi ◽  
K. Kobayashi ◽  
G. Honjo
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
High Vacuum ◽  
Dendritic Morphology ◽  
Thin Film Growth ◽  
Ultra High Vacuum ◽  
In Situ Studies ◽  
In Situ Electron Microscopy ◽  
Dendritic Shape

An ultra-high vacuum (UHV) electron microscope was constructed for special purpose of in-situ studies of thin film growth and some experimental results have already been published (1). Here, recent results are described.1. Au/graphite (nucleation and growth mode). Growths of Au in a dendritic shape at 150°C were observed on graphite. The dendritic morphology was said to be characteristic of the Au growth on UHV cleaved graphite (2). We cleaned an air cleaved surface by heating in UHV EM (10-8 torr) for 20 minutes prior to the Au deposition. The dendritic shape growth in Fig. 1, therefore, indicates that the graphite surface became clean with the present heat treatment and that the in-situ studies were done under clean conditions.

In situ quantitative analysis of GeXSi1-X alloys during growth by reflection EELS

1991 ◽  
Vol 49 ◽  
pp. 878-879
Author(s):  
Shouleh Nikzad ◽  
Channing C. Ahn ◽  
Harry A. Atwater
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Mbe Growth ◽  
Electron Microscopes ◽  
Electron Energy Loss

The universality of reflection high energy electron diffraction (RHEED) as a structural tool during film growth by molecular beam epitaxy (MBE) brings with it the possibility for in situ surface chemical analysis via spectroscopy of the accompanying inelastically scattered electrons. We have modified a serial electron energy loss spectrometer typically used on an electron microscope to work with a 30 keV RHEED-equipped MBE growth chamber in order to determine the composition of GexSi1-x alloys by reflection electron energy loss (REELS) experiments. Similar work done in transmission electron microscopes has emphasized the surface sensitivity of this technique even though these experiments have never been done under ultra-high vacuum conditions. In this work, we are primarily concerned with the accuracy with which core losses can be used to determine composition during MBE growth.

In-situ study of Ni–Ti thin film growth on a TiN intermediate layer by X-ray diffraction

2007 ◽  
Vol 126 (1) ◽  
pp. 332-337 ◽  
Author(s):  
R MARTINS ◽  
N SCHELL ◽  
R SILVA ◽  
L PEREIRA ◽  
K MAHESH ◽  
...  
Keyword(s):  
Thin Film ◽  
Intermediate Layer ◽  
Film Growth ◽  
Thin Film Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
In Situ Study

scholarly journals Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by in Situ X-ray Diffraction

Langmuir ◽  
2020 ◽  
Vol 36 (8) ◽  
pp. 1898-1906 ◽  
Author(s):  
Mathias K. Huss-Hansen ◽  
Martin Hodas ◽  
Nada Mrkyvkova ◽  
Jakub Hagara ◽  
Bjarke B. E. Jensen ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Alignment

scholarly journals In-situ Observation of 2-Dimensional X-ray Diffraction of Organic Thin-film Growth by Synchrotron Radiation

Hyomen Kagaku ◽  
2014 ◽  
Vol 35 (4) ◽  
pp. 190-195 ◽  
Author(s):  
Noriyuki YOSHIMOTO ◽  
Takeshi WATANABE ◽  
Tomoyuki KOGANEZAWA ◽  
Mamoru KIKUCHI ◽  
Ichiro HIROSAWA
Keyword(s):  
Thin Film ◽  
Synchrotron Radiation ◽  
Film Growth ◽  
Thin Film Growth ◽  
In Situ Observation ◽  
Organic Thin Film ◽  
X Ray Diffraction ◽  
X Ray

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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