High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

2015 ◽  
Vol 107 (10) ◽  
pp. 103302 ◽  
Author(s):  
Amit Tewari ◽  
Srinivas Gandla ◽  
Anil Reddy Pininti ◽  
K. Karuppasamy ◽  
Siva Böhm ◽  
...  
2008 ◽  
Vol 8 (9) ◽  
pp. 4561-4564 ◽  
Author(s):  
Do-Hoon Hwang ◽  
Yong Suk Yang ◽  
Jeong-Ik Lee ◽  
Seong Hyun Kim ◽  
Oun-Ho Park ◽  
...  

A polyhedral oligomeric silsesquioxane derivative (POSS-OXT) containing photo-curable 4-membered cyclic oxetane functional groups was used as a gate dielectric of organic field effect transistor. The POSS-OXT was cross-linked and completely solidified by UV irradiation in the presence of a selected photo acid generator, and pinhole free uniform thin film was obtained. We fabricated a metal/insulator/metal device of Au/POSS-OXT (300 nm)/Au with area of 0.7 mm2 and the measured leakage current and capacitance of the device to evaluate the insulating properties of the POSS-OXT thin film. The maximum current was about 0.25 nA when 40 V was applied to the device. The observed values of the capacitance per unit area and dissipation factor were 11.4 nF/cm2 and 0.025, respectively. We fabricated an organic thin film transistor with pentacene as the active semiconductor and the photo-cross-linked POSS-OXT as an insulator. A field effect carrier mobility of 0.03 cm2/V·s was obtained with the device.


2016 ◽  
Vol 8 (37) ◽  
pp. 24325-24330 ◽  
Author(s):  
Prashant Sonar ◽  
Jingjing Chang ◽  
Jae H. Kim ◽  
Kok-Haw Ong ◽  
Eliot Gann ◽  
...  

2004 ◽  
Vol 85 (26) ◽  
pp. 6368-6370 ◽  
Author(s):  
Jong-Moo Kim ◽  
Joo-Won Lee ◽  
Jai-Kyeong Kim ◽  
Byeong-Kwon Ju ◽  
Jong-Seung Kim ◽  
...  

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