On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis

2017 ◽  
Vol 121 (14) ◽  
pp. 144504 ◽  
Author(s):  
Abhitosh Vais ◽  
Jacopo Franco ◽  
Dennis Lin ◽  
Vamsi Putcha ◽  
Sonja Sioncke ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
Capacitance Voltage ◽  
Voltage Hysteresis ◽  
Defect Levels

An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

2013 ◽  
Vol 114 (14) ◽  
pp. 144105 ◽  
Author(s):  
Jun Lin ◽  
Yuri Y. Gomeniuk ◽  
Scott Monaghan ◽  
Ian M. Povey ◽  
Karim Cherkaoui ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
Capacitance Voltage ◽  
Voltage Hysteresis

Impact of native defects in high-k dielectric oxides on GaN/oxide metal-oxide-semiconductor devices

2013 ◽  
Vol 250 (4) ◽  
pp. 787-791 ◽  
Author(s):  
Minseok Choi ◽  
John L. Lyons ◽  
Anderson Janotti ◽  
Chris G. Van de Walle
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Native Defects ◽  
High K ◽  
High K Dielectric

In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

2019 ◽  
Vol 11 (4) ◽  
pp. 431-439 ◽  
Author(s):  
Rama Kambhampati ◽  
Sergei Koveshnikov ◽  
Vadim Tokranov ◽  
M. Yakimov ◽  
R Moore ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Gate Stack ◽  
In Situ Deposition ◽  
High K
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