An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors

2013 ◽  
Vol 114 (14) ◽  
pp. 144105 ◽  
Author(s):  
Jun Lin ◽  
Yuri Y. Gomeniuk ◽  
Scott Monaghan ◽  
Ian M. Povey ◽  
Karim Cherkaoui ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High K ◽  
Capacitance Voltage ◽  
Voltage Hysteresis

Comparison of Different High-k Dielectric Materials in MOS Device from C-V Characteristics

2013 ◽  
Vol 816-817 ◽  
pp. 60-64 ◽  
Author(s):  
Niladri Pratap Maity ◽  
R.K. Thapa ◽  
S. Baishya
Keyword(s):  
Metal Oxide ◽  
Dielectric Materials ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Characteristic Parameters ◽  
High K ◽  
Capacitance Voltage ◽  
High K Dielectric ◽  
Mos Device

In this paper different characteristic parameters using high-k dielectric materials in Metal Oxide Semiconductor (MOS) device have been compared from the theoretical and simulated Capacitance-Voltage (C-V) graphs. The simulation has been done using ATLAS device simulator. The agreement of the specified values while deriving and simulating and that extracted is excellent. Further, the extracted parameters for high-k dielectric materials show an inferior interfacial quality.

A study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system

2015 ◽  
Vol 147 ◽  
pp. 273-276 ◽  
Author(s):  
Jun Lin ◽  
Scott Monaghan ◽  
Karim Cherkaoui ◽  
Ian Povey ◽  
Éamon O’Connor ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Capacitance Voltage ◽  
Semiconductor System ◽  
Voltage Hysteresis

Nonvolatile Memory Devices with NiSi2/CoSi2 Nanocrystals

2007 ◽  
Vol 7 (1) ◽  
pp. 339-343 ◽  
Author(s):  
P. H. Yeh ◽  
L. J. Chen ◽  
P. T. Liu ◽  
D. Y. Wang ◽  
T. C. Chang
Keyword(s):  
Metal Oxide ◽  
Nonvolatile Memory ◽  
Semiconductor Industry ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Retention Characteristic ◽  
Capacitance Voltage ◽  
Nonvolatile Memory Devices ◽  
Voltage Hysteresis

Metal-oxide-semiconductor structures with NiSi2 and CoSi2 nanocrystals embedded in the SiO2 layer have been fabricated. A pronounced capacitance–voltage hysteresis was observed with a memory window about 1 V under low programming voltage. The retention characteristic can be improved by using HfO2 layer as control oxide. The processing of the structure is compatible with the current manufacturing technology of semiconductor industry.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Sign in / Sign up

Export Citation Format

Share Document