scholarly journals Publisher’s Note: “Continuous tuning of two-section, single-mode terahertz quantum-cascade lasers by fiber-coupled, near-infrared illumination” [AIP Advances 7, 055201 (2017)]

AIP Advances ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 059903 ◽  
Author(s):  
Martin Hempel ◽  
Benjamin Röben ◽  
Michael Niehle ◽  
Lutz Schrottke ◽  
Achim Trampert ◽  
...  
AIP Advances ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 055201 ◽  
Author(s):  
Martin Hempel ◽  
Benjamin Röben ◽  
Michael Niehle ◽  
Lutz Schrottke ◽  
Achim Trampert ◽  
...  

Photonics ◽  
2021 ◽  
Vol 8 (12) ◽  
pp. 583
Author(s):  
Kamil Pierściński ◽  
Dorota Pierścińska ◽  
Grzegorz Sobczak ◽  
Aleksandr Kuźmicz ◽  
Krzysztof Chmielewski ◽  
...  

Mid-infrared (mid-IR λ ≈ 3–12 μm), single-mode-emission Quantum Cascade Lasers (QCLs) are of significant interest for a wide range of applications, especially as the laser sources are chosen for laser absorption spectroscopy. In this work, we present the design, fabrication and characterization of multi-section, coupled-cavity, mid-IR quantum cascade lasers. The purpose of this work is to propose a design modification for a coupled-cavity device, yielding a single-mode emission with a longer range of continuous tuning during the pulse, in contrast to a 2-section device. This effect was obtained and demonstrated in the work. The proposed design of a 3-section coupled-cavity QCL allows for a single-mode emission with 35 dB side-mode suppression ratio. Additionally, the time-resolved spectra of the wavelength shift during pulse operation, show a continuous tuning of ~3 cm−1 during the 2 μs pulse. The devices were fabricated in a slightly modified, standard laser process using dry etching.


2006 ◽  
Author(s):  
Stéphane Blaser ◽  
Lubos Hvozdara ◽  
Yargo Bonetti ◽  
Antoine Muller ◽  
Andreas Bächle ◽  
...  

2004 ◽  
Vol 829 ◽  
Author(s):  
S. Golka ◽  
M. Austerer ◽  
C. Pflügl ◽  
W. Schrenk ◽  
G. Strasser

ABSTRACTGratings in GaAs/AlGaAs mid-infrared quantum cascade lasers (QCLs) are fabricated with a structure depth of more than 10 μm. A N2/SiCl4 inductively coupled plasma reactive ion etching (ICP-RIE) process was employed to achieve extremely smooth sidewalls and selectivities to the SiNX etch mask of up to 70:1. EDX spectra measured on as-etched samples show that sidewall etch inhibition is caused by a thin Si containing layer on the sidewalls that is formed simultaneously with ICP etching of GaAs at the bottom of the trenches. To demonstrate device application gratings with a pitch of 1.72 μm are applied to long rib waveguide -based QCLs emitting at λ = 10.7 μm. When etched laterally together with the rib the grating gives rise to stable single mode emission up to 295K from these QCLs. The respective grating coupling coefficient is determined to be κ = 29 cm-1.


2016 ◽  
Vol 24 (13) ◽  
pp. 14589 ◽  
Author(s):  
Ryan M. Briggs ◽  
Clifford Frez ◽  
Mathieu Fradet ◽  
Siamak Forouhar ◽  
Romain Blanchard ◽  
...  

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