scholarly journals Effect of substrate rotation speed and off-center deposition on the structural, optical, and electrical properties of AZO thin films fabricated by DC magnetron sputtering

2018 ◽  
Vol 123 (16) ◽  
pp. 165104 ◽  
Author(s):  
F. Turkoglu ◽  
H. Koseoglu ◽  
S. Zeybek ◽  
M. Ozdemir ◽  
G. Aygun ◽  
...  
2015 ◽  
Vol 659 ◽  
pp. 540-544
Author(s):  
Tanakorn Khumtong ◽  
Rachsak Sakdanuphab

In this work, titaniumoxynitride (TiOxNy) thin films were deposited on glass slide substrates by using reactive dc magnetron sputtering technique. The reactive gas ratios between O2and N2were studied in the range of 15-30% with a constant of Ar gas at 110 sccm and a time of 120 minutes. Microstructure, optical, and electrical properties of TiOxNythin films were analysis by using SEM, AFM, GIXRD, UV-VIS spectrophotometer, and 4-point probe measurements. We found that the thickness of the films decreases from 1.0 to 0.8 μm by increasing of O2gas ratios. The TiOxNythin films have smooth surface related to small nanograin size. The roughness of the films slightly decreases when O2gas ratios increase. From optical transmission spectra, we observed that the transparent of the films increases with different O2gas ratio and shifts the band gap from 2.67 to 3.32 eV. The resistivity of the films obviously increases from 3.04 x 10-3Ω-cm to 5.45 Ω-cm depending on O2gas ratio. These results indicate the phase changes of the TiOxNyfilms from metallic to oxide phases. The XRD spectra show poor crystalline TiN (220) and TiO2(021) at 15% of O2ratio and then the films become amorphous structure by increasing the O2gases. The O2:N2gas ratios also affects to the different concentration of oxygen and nitrogen into the TiOxNythin films that lead to the various structural, optical and electrical properties.


2021 ◽  
Author(s):  
Chunhu Zhao ◽  
Junfeng Liu ◽  
Yixin Guo ◽  
Yanlin Pan ◽  
Xiaobo Hu ◽  
...  

Abstract Aluminum doped ZnO thin films (AZO), which simultaneously transmit light and conduct electrical current, are widely applied in photovoltaic devices. To achieve high performance AZO thin films, the effects of RF magnetron sputtering conditions on the optical and electrical properties of the films has been explored. The optimized AZO thin films exhibit strong (002) orientated growth with hexagonal wurtzite structure. The minimum resistivity of 0.9Í10-3 Ω·cm, the highest carrier concentration of 2.8Í1020 cm-3, the best Hall mobility of 22.8 cm2·(V·s)-1 and average transmittance above 85% can be achieved at the optimum deposition condition of 0.2 Pa, 120 W and 200 °C. Considering the single parabolic band model, the bandgap shift by carrier concentration of the films can be attributed to the Burstein-Moss effect. The results indicate that RF magnetron sputtered AZO thin films are promising for solar cell applications relying on front contact layers.


2012 ◽  
Vol 41 (8) ◽  
pp. 922-926 ◽  
Author(s):  
林建平 LIN Jian-ping ◽  
林丽梅 LIN Li-mei ◽  
关贵清 GUAN Gui-qing ◽  
吴扬微 WU Yang-wei ◽  
赖发春 LAI Fa-chun

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