Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change

2018 ◽  
Vol 112 (18) ◽  
pp. 183504 ◽  
Author(s):  
Y. Shuang ◽  
Y. Sutou ◽  
S. Hatayama ◽  
S. Shindo ◽  
Y. H. Song ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Phase Change ◽  
Phase Change Material ◽  
Bulk Resistance ◽  
Resistance Change ◽  
Change Material ◽  
Change Memory

Polyamorphism in K2Sb8Se13 for multi-level phase-change memory

2020 ◽  
Vol 8 (19) ◽  
pp. 6364-6369 ◽  
Author(s):  
Meng Xu ◽  
Chong Qiao ◽  
Kan-Hao Xue ◽  
Hao Tong ◽  
Xiaomin Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Storage ◽  
Phase Change Memory ◽  
State Data ◽  
Amorphous Phases ◽  
Multi Level ◽  
Change Material ◽  
Change Memory

A novel phase-change material K2Sb8Se13 with two amorphous phases was thoroughly investigated for multi-state data storage.

Nitrogen-doped Sb-rich Si–Sb–Te phase-change material for high-performance phase-change memory

2013 ◽  
Vol 61 (19) ◽  
pp. 7324-7333 ◽  
Author(s):  
Xilin Zhou ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Yan Cheng ◽  
Feng Rao ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
High Performance ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Change Material ◽  
Change Memory

Interface Characterization of Metals and Metal-nitrides to Phase Change Materials

2011 ◽  
Vol 1337 ◽  
Author(s):  
Deepu Roy ◽  
Dirk J. Gravesteijn ◽  
Rob A. M. Wolters
Keyword(s):  
Contact Resistance ◽  
Phase Change ◽  
Phase Change Materials ◽  
Electrode Materials ◽  
Interfacial Contact ◽  
Interfacial Contact Resistance ◽  
Change Material ◽  
Change Memory ◽  
Selection Of

ABSTRACTWe have investigated the interfacial contact properties of the CMOS compatible electrode materials W, TiW, Ta, TaN and TiN to doped-Sb2Te phase change material (PCM). This interface is characterized both in the amorphous and in the crystalline state of the doped-Sb2Te. The electrical nature of the interface is characterized by contact resistance measurements and is expressed in terms of specific interfacial contact resistance (ρC). These measurements are performed on four-terminal Kelvin Resistor test structures. Knowledge of the ρC is useful for selection of the electrode in the integration and optimization of the phase change memory cells.

Etching characteristics of phase change material GeTe in inductively coupled BCl3/Ar plasma for phase change memory

2016 ◽  
Vol 161 ◽  
pp. 69-73 ◽  
Author(s):  
Yangyang Xia ◽  
Bo Liu ◽  
Qing Wang ◽  
Zhonghua Zhang ◽  
Shasha Li ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Inductively Coupled ◽  
Ar Plasma ◽  
Change Material ◽  
Change Memory

Ga2Te3 phase change material for low-power phase change memory application

2010 ◽  
Vol 97 (8) ◽  
pp. 083504 ◽  
Author(s):  
Hao Zhu ◽  
Jiang Yin ◽  
Yidong Xia ◽  
Zhiguo Liu
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory
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