Effects of deposition temperature on growth and properties of pulsed laser deposited VO2 thin films and nanostructures

2019 ◽  
Author(s):  
Komal Mulchandani ◽  
Ankit Soni ◽  
K. R. Mavani
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Vo2 Thin Films

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

Microstructure of epitaxial VO2 thin films deposited on (1120) sapphire by MOCVD

1994 ◽  
Vol 9 (9) ◽  
pp. 2264-2271 ◽  
Author(s):  
H. Zhang ◽  
H.L.M. Chang ◽  
J. Guo ◽  
T.J. Zhang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Deposition Temperature ◽  
Room Temperature ◽  
High Resolution Electron Microscopy ◽  
Sapphire Substrates ◽  
Resolution Electron ◽  
Initial Nucleation ◽  
Vo2 Thin Films ◽  
Conventional Electron Microscopy

Epitaxial VO2 thin films grown on (1120) sapphire (α-Al2O3) substrates by MOCVD at 600 °C have been characterized by conventional electron microscopy and high resolution electron microscopy (HREM). Three different epitaxial relationships between the monoclinic VO2 films and sapphire substrates have been found at room temperature: I. (200) [010] monoclinic VO2 ‖ (1120) [0001] sapphire, II. (002) [010] monoclinic VO2 ‖ (1120) [0003] sapphire, and III. (020) [102] monoclinic VO2 ‖ (1120) [0001] sapphire. Expitaxial relationships II and III are equivalent to each other when the film possesses tetragonal structure at the deposition temperature; i.e., they can be described as (010) [100] tetragonal VO2 ‖ (1120) [0001] sapphire and (100) [010] tetragonal VO2 ‖ (1120) [0001] sapphire. HREM image shows that the initial nucleation of the film was dominated by the first orientation relationship, but the film then grew into the grains of the second and the third (equivalent to each other at the deposition temperature) epitaxial relationships. Successive 90°transformation rotational twins around the a-axis are commonly observed in the monoclinic films.

scholarly journals Effects of Deposition Temperature and Annealing Process on PZT Thin Films Prepared by Pulsed Laser Deposition

2002 ◽  
Vol 3 (1) ◽  
pp. 14-17
Author(s):  
Min-Chul Kim ◽  
Ji-Won Choi ◽  
Chong-Yun Kang ◽  
Seok-Jin Yoon ◽  
Hyun-Jai Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Laser Deposition ◽  
Pzt Thin Films
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