scholarly journals The role of Mg bulk hyper-doping and delta-doping in low-resistance GaN homojunction tunnel diodes with negative differential resistance

2019 ◽  
Vol 126 (8) ◽  
pp. 083110
Author(s):  
Ehsan Vadiee ◽  
Evan A. Clinton ◽  
Joe V. Carpenter ◽  
Heather McFavilen ◽  
Chantal Arena ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Tunnel Diodes ◽  
Low Resistance ◽  
Delta Doping

Negative differential resistance in GeSi core–shell transport junctions: the role of local sp2hybridization

Nanoscale ◽  
2016 ◽  
Vol 8 (35) ◽  
pp. 16026-16033 ◽  
Author(s):  
Nuo Liu ◽  
Lei Zhang ◽  
Xiaobin Chen ◽  
Xianghua Kong ◽  
Xiaohong Zheng ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Core Shell

Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperatures

2017 ◽  
Vol 47 ◽  
pp. 228-234 ◽  
Author(s):  
Jeremy J. Guttman ◽  
Conner B. Chambers ◽  
Al Rey Villagracia ◽  
Gil Nonato C. Santos ◽  
Paul R. Berger
Keyword(s):  
Negative Differential Resistance ◽  
Atomic Layer ◽  
Differential Resistance ◽  
Tunnel Diodes

scholarly journals Erratum: “Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance” [Appl. Phys. Lett. 108, 131103 (2016)]

2016 ◽  
Vol 109 (10) ◽  
pp. 109901
Author(s):  
Fatih Akyol ◽  
Sriram Krishnamoorthy ◽  
Yuewei Zhang ◽  
Jared Johnson ◽  
Jinwoo Hwang ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Low Resistance

Negative differential resistance in molecular devices: the role of molecule-electrode coupling

2011 ◽  
Vol 54 (8) ◽  
pp. 1455-1460 ◽  
Author(s):  
YaXin Zhai ◽  
GuoMin Ji ◽  
ChangFeng Fang ◽  
Bin Cui ◽  
Peng Zhao ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Molecular Devices

scholarly journals Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts

2018 ◽  
Vol 112 (25) ◽  
pp. 252103 ◽  
Author(s):  
Evan A. Clinton ◽  
Ehsan Vadiee ◽  
Shyh-Chiang Shen ◽  
Karan Mehta ◽  
P. Douglas Yoder ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Low Voltage ◽  
Differential Resistance ◽  
Tunnel Diodes ◽  
Voltage Loss

scholarly journals Туннельные диоды на базе эпитаксиальных структур n-=SUP=-+-=/SUP=--Ge/p-=SUP=-+-=/SUP=--Si(001), выращенных методом горячей проволоки

2019 ◽  
Vol 53 (9) ◽  
pp. 1267
Author(s):  
В.Г. Шенгуров ◽  
Д.О. Филатов ◽  
С.А. Денисов ◽  
В.Ю. Чалков ◽  
Н.А. Алябина ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
Negative Differential Resistance ◽  
Chemical Vapor ◽  
Differential Resistance ◽  
Tunnel Diodes ◽  
Donor Impurity ◽  
Hot Wire ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstractn ^+-Ge/ p ^+-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH_4 at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for monolithic integration into Si-based integrated circuits are formed based on these structures. Doping of the n ^+-Ge layers with a donor impurity (P) to a concentration of >1 × 10^19 cm^–3 is performed via the thermal decomposition of GaP. Distinct regions of the negative differential resistance are observed in the current–voltage characteristics of tunnel diodes.

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