Negative differential resistance from a van Hove singularity in tunnel diodes

2006 ◽  
Vol 89 (19) ◽  
pp. 192117 ◽  
Author(s):  
Paul Moffatt ◽  
Eugene H. Kim
2017 ◽  
Vol 47 ◽  
pp. 228-234 ◽  
Author(s):  
Jeremy J. Guttman ◽  
Conner B. Chambers ◽  
Al Rey Villagracia ◽  
Gil Nonato C. Santos ◽  
Paul R. Berger

2018 ◽  
Vol 112 (25) ◽  
pp. 252103 ◽  
Author(s):  
Evan A. Clinton ◽  
Ehsan Vadiee ◽  
Shyh-Chiang Shen ◽  
Karan Mehta ◽  
P. Douglas Yoder ◽  
...  

Author(s):  
В.Г. Шенгуров ◽  
Д.О. Филатов ◽  
С.А. Денисов ◽  
В.Ю. Чалков ◽  
Н.А. Алябина ◽  
...  

Abstractn ^+-Ge/ p ^+-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH_4 at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for monolithic integration into Si-based integrated circuits are formed based on these structures. Doping of the n ^+-Ge layers with a donor impurity (P) to a concentration of >1 × 10^19 cm^–3 is performed via the thermal decomposition of GaP. Distinct regions of the negative differential resistance are observed in the current–voltage characteristics of tunnel diodes.


2013 ◽  
Vol 12 (2) ◽  
pp. 85-93 ◽  
Author(s):  
Viet Hung Nguyen ◽  
Jérôme Saint-Martin ◽  
Damien Querlioz ◽  
Fulvio Mazzamuto ◽  
Arnaud Bournel ◽  
...  

2009 ◽  
Vol 45 (14) ◽  
pp. 759 ◽  
Author(s):  
P.E. Thompson ◽  
G.G. Jernigan ◽  
S.-Y. Park ◽  
R. Yu ◽  
R. Anisha ◽  
...  

2019 ◽  
Vol 126 (8) ◽  
pp. 083110
Author(s):  
Ehsan Vadiee ◽  
Evan A. Clinton ◽  
Joe V. Carpenter ◽  
Heather McFavilen ◽  
Chantal Arena ◽  
...  

2019 ◽  
Vol 115 (8) ◽  
pp. 082104 ◽  
Author(s):  
Evan A. Clinton ◽  
Zachary Engel ◽  
Ehsan Vadiee ◽  
Joe V. Carpenter ◽  
Zachary C. Holman ◽  
...  

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...


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