Туннельные диоды на базе эпитаксиальных структур n-=SUP=-+-=/SUP=--Ge/p-=SUP=-+-=/SUP=--Si(001), выращенных методом горячей проволоки

Abstractn ^+-Ge/ p ^+-Si(001) epitaxial structures are grown by hot-wire chemical vapor deposition from GeH_4 at a low substrate temperature (~325°C). Prototype tunnel diodes allowing for monolithic integration into Si-based integrated circuits are formed based on these structures. Doping of the n ^+-Ge layers with a donor impurity (P) to a concentration of >1 × 10^19 cm^–3 is performed via the thermal decomposition of GaP. Distinct regions of the negative differential resistance are observed in the current–voltage characteristics of tunnel diodes.

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Особенности транспорта носителей заряда в структурах n-=SUP=-+-=/SUP=--n-=SUP=-0-=/SUP=--n-=SUP=-+-=/SUP=- с гетеропереходом GaAs/AlGaAs при сверхвысоких плотностях тока

Физика и техника полупроводников ◽

10.21883/ftp.2019.06.47735.9064 ◽

2019 ◽

Vol 53 (6) ◽

pp. 816

Author(s):

С.О. Слипченко ◽

А.А. Подоскин ◽

О.С. Соболева ◽

В.С. Юферев ◽

В.С. Головин ◽

...

Keyword(s):

Negative Differential Resistance ◽

Differential Resistance ◽

Voltage Characteristic ◽

Balance Model ◽

Operating Voltage ◽

Current Voltage Characteristic ◽

A Value ◽

Current Voltage ◽

Algaas Layer ◽

Current Voltage Characteristics

AbstractThe current–voltage characteristics of n ^+-GaAs/ n ^0-GaAs/ N ^0-AlGaAs/ N ^+-AlGaAs/ n ^+-GaAs isotype heterostructures and n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs homostructures are studied. It is shown that, for a heterostructure under reverse bias providing the injection of electrons from n ^0-GaAs into N ^0-AlGaAs, the maximum operating voltage reaches a value of 48 V at a thickness of the N ^0-AlGaAs layer of 1 . 0 μm, and the current–voltage characteristic has no region of negative differential resistance. The operation of a homostructure is accompanied by a transition to the negative-differential-resistance region at a voltage of 10 V. Theoretical analysis in terms of the energy-balance model demonstrated that the reverse-biased isotype heterostructure has no negative-differential-resistance region because, in this case, the field domain does not collapse in contrast to what occurs in homostructures.

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Mechanisms of negative differential resistance in glutamine-functionalized WS2 quantum dots

Nanotechnology ◽

10.1088/1361-6528/ac3685 ◽

2021 ◽

Author(s):

Denice Feria ◽

Sonia Sharma ◽

Yu-Ting Chen ◽

Zhi-Ying Weng ◽

Kuo-Pin Chiu ◽

...

Keyword(s):

Quantum Dots ◽

Negative Differential Resistance ◽

Electronic Devices ◽

Transition Metal Dichalcogenides ◽

Differential Resistance ◽

Voltage Range ◽

Current Voltage ◽

Metal Dichalcogenides ◽

Current Voltage Characteristics ◽

Memory Applications

Abstract Understanding the mechanism of the negative differential resistance (NDR) in transition metal dichalcogenides is essential for fundamental science and the development of electronic devices. Here, the NDR of the current-voltage characteristics was observed based on the glutamine-functionalized WS2 quantum dots (QDs). The NDR effect can be adjusted by varying the applied voltage range, air pressure, surrounding gases, and relative humidity. A peak-to-valley current ratio as high as 6.3 has been achieved at room temperature. Carrier trapping induced by water molecules was suggested to be responsible for the mechanism of the NDR in the glutamine-functionalized WS2 QDs. Investigating the NDR of WS2 QDs may promote the development of memory applications and emerging devices.

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Negative Differential Resistance of Graphene Oxide/Sulphur Compound

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.67.25 ◽

2021 ◽

Vol 67 ◽

pp. 25-31

Author(s):

Sophia R. Figarova ◽

Elvin M. Aliyev ◽

Rashad G. Abaszade ◽

R.I. Alekberov ◽

Vagif R. Figarov

Keyword(s):

Graphene Oxide ◽

Functional Groups ◽

Negative Differential Resistance ◽

Characteristic Curve ◽

Differential Resistance ◽

Localized States ◽

Sulphur Compound ◽

X Ray Diffraction ◽

Current Voltage ◽

Current Voltage Characteristics

Graphene oxide/sulphur compound was synthesized by Hammers method. The chemical composition, presence/quantity of functional groups, exfoliation level, number of layers, crystallite size of graphene oxide/sulphur were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy images. The current-voltage characteristics of the samples were measured in air at room temperature. In the I - V characteristic curve of graphene oxide/sulphur compound with the ratio of oxygen to carbon of 3.54 and that to sulphur of 42.54, negative differential resistance was observed. The negative differential resistance is attributed to current carrier transitions between the localized states formed by functional groups.

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