Simulation on multi-species vacuum arc considering both ionization-recombination and species diffusion processes

2020 ◽  
Vol 27 (2) ◽  
pp. 023514
Author(s):  
Lijun Wang ◽  
Jie Deng ◽  
Ze Yang ◽  
Xiao Zhang ◽  
Shenli Jia
2021 ◽  
pp. 106-109
Author(s):  
T.S. Skoblo ◽  
S.P. Romaniuk ◽  
Ye.L. Belkin ◽  
T.V. Maltsev

Multilayer nanostructured ZrN/ZrO2 coatings were applied to increase the operational resistance of various machinery parts by using vacuum-arc deposition in Bulat-type facility. To describe the structure formation, a new approach based on optical-mathematical method for processing metallographic images is proposed. The structure formation of the multilayer coating with an assessment of the degree of its inhomogeneity and diffusion processes between the layers is studied. For a reliable assessment, the changes in the horizontal and vertical directions of the images with the choice of optimal intervals were comparatively analyzed. It has been found that the most stable results are achieved using 20 and 25 dots (pixels).


1976 ◽  
Vol 32 ◽  
pp. 109-116 ◽  
Author(s):  
S. Vauclair

This paper gives the first results of a work in progress, in collaboration with G. Michaud and G. Vauclair. It is a first attempt to compute the effects of meridional circulation and turbulence on diffusion processes in stellar envelopes. Computations have been made for a 2 Mʘstar, which lies in the Am - δ Scuti region of the HR diagram.Let us recall that in Am stars diffusion cannot occur between the two outer convection zones, contrary to what was assumed by Watson (1970, 1971) and Smith (1971), since they are linked by overshooting (Latour, 1972; Toomre et al., 1975). But diffusion may occur at the bottom of the second convection zone. According to Vauclair et al. (1974), the second convection zone, due to He II ionization, disappears after a time equal to the helium diffusion time, and then diffusion may happen at the bottom of the first convection zone, so that the arguments by Watson and Smith are preserved.


Author(s):  
L. Wan ◽  
R. F. Egerton

INTRODUCTION Recently, a new compound carbon nitride (CNx) has captured the attention of materials scientists, resulting from the prediction of a metastable crystal structure β-C3N4. Calculations showed that the mechanical properties of β-C3N4 are close to those of diamond. Various methods, including high pressure synthesis, ion beam deposition, chemical vapor deposition, plasma enhanced evaporation, and reactive sputtering, have been used in an attempt to make this compound. In this paper, we present the results of electron energy loss spectroscopy (EELS) analysis of composition and bonding structure of CNX films deposited by two different methods.SPECIMEN PREPARATION Specimens were prepared by arc-discharge evaporation and reactive sputtering. The apparatus for evaporation is similar to the traditional setup of vacuum arc-discharge evaporation, but working in a 0.05 torr ambient of nitrogen or ammonia. A bias was applied between the carbon source and the substrate in order to generate more ions and electrons and change their energy. During deposition, this bias causes a secondary discharge between the source and the substrate.


Author(s):  
Ari Arapostathis ◽  
Vivek S. Borkar ◽  
Mrinal K. Ghosh

1980 ◽  
Vol 41 (C6) ◽  
pp. C6-28-C6-31 ◽  
Author(s):  
R. Messer ◽  
H. Birli ◽  
K. Differt

1978 ◽  
Vol 125 (8) ◽  
pp. 665-706 ◽  
Author(s):  
G.A. Lyubimov ◽  
V.I. Rakhovskii
Keyword(s):  

2019 ◽  
Vol 139 (5) ◽  
pp. 302-308 ◽  
Author(s):  
Shinji Yamamoto ◽  
Soshi Iwata ◽  
Toru Iwao ◽  
Yoshiyasu Ehara

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.


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