Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

Analysis of Sputtered Zinc Oxide Films

1980 ◽  
Vol 38 ◽  
pp. 416-417
Author(s):  
T. A. Emma ◽  
M. P. Singh
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Piezoelectric Materials ◽  
Oxide Films ◽  
Optical Quality ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Sputtered Films ◽  
Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

Characteristics of Zinc Oxide Film Prepared by Chemical Bath Deposition Method

2014 ◽  
Vol 602-603 ◽  
pp. 871-875
Author(s):  
Yen Pei Fu ◽  
Jian Jhih Chen
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
Oxide Films ◽  
Hexagonal Structure ◽  
Zno Films ◽  
Zinc Oxide Film ◽  
Incident Wavelength ◽  
Zinc Oxide Films

In this study, ZnO films, prepared by Chemical Bath Deposition (CBD), are applied as the conductive layers for thin film solar cells. Zinc acetate is used as a source of zinc, and different proportions of ammonia solution are added and well mixed. The growth of zinc oxide films in reaction solutions is taken place at 80°C and then heated to 500°C for one hour. In this study, the different ammonia concentrations and deposition times is controlled. The thin film structure is Hexagonal structure, which is determined by X-ray diffraction spectrometer (XRD) analysis. Scanning electron microscopy (SEM) is used as the observation of surface morphology, the bottom of the film is the interface where the heterogeneous nucleation happens. With the increase of deposition time, there were a few attached zinc oxide particles, which is formed by homogeneous nucleation. According to UV / visible light (UV / Vis) absorption spectrometer transmittance measurements and the relationship between/among the incident wavelength, it can be converted to the energy gaps (Eg), which are about 3.0 to 3.2eV, by using fluorescence spectroscopy analysis. The emission of zinc oxide films has two wavelengths which are located on 510nm and 570nm. According to Based on the all analytic results, the ammonia concentration at 0.05M, and the deposition time is 120 minutes, would obtain the conditions of ZnO films which is more suitable for applications of conductive layer material in thin film solar cell.

Change in polarity of zinc oxide films grown on sapphire substrates without insertion of any buffer layer

2008 ◽  
Vol 23 (12) ◽  
pp. 3269-3272 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Tsuyoshi Ohnishi ◽  
Takeshi Ohgaki ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Zno Films ◽  
Ion Scattering ◽  
Ceramic Target ◽  
Interfacial Phase ◽  
Sapphire Substrates ◽  
Zinc Oxide Films ◽  
Ion Scattering Spectroscopy ◽  
Doped Zno ◽  
Polarity Change

We have investigated the polarity of zinc oxide (ZnO) and Al-doped ZnO films grown on (11¯20) and (0001) sapphire substrates, using coaxial impact collision ion scattering spectroscopy. The films grown by pulsed laser deposition with a nominally undoped ZnO ceramic target had a (000¯1) surface, whereas the films prepared with a 1 mol% Al-doped ZnO ceramic target had a (0001) surface. The usage of Al-doped and undoped targets caused no difference in the in-plane lattice orientation. Electron microscope observations revealed that polarity change due to doping occurred without the formation of any interfacial phase between ZnO and sapphire.

Ferromagnetism in Cu-Doped ZnO Films Prepared by Filtered Cathodic Vacuum Arc Technique

2019 ◽  
Vol 13 (3) ◽  
pp. 143-149
Author(s):  
Tun Seng Herng ◽  
Shu Ping Lau ◽  
Siu Fung Yu
Keyword(s):  
Vacuum Arc ◽  
Zno Films ◽  
Doped Zno ◽  
Filtered Cathodic Vacuum Arc

scholarly journals Fabrication of Highly Porous and Pure Zinc Oxide Films Using Modified DC Magnetron Sputtering and Post-Oxidation

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 6112
Author(s):  
Se-Yong Park ◽  
Soon-Ho Rho ◽  
Hwan-Seok Lee ◽  
Kyoung-Min Kim ◽  
Hee-Chul Lee
Keyword(s):  
Magnetron Sputtering ◽  
Gas Flow ◽  
Composite Films ◽  
Zno Films ◽  
Porous Films ◽  
Pure Zinc ◽  
Surface Areas ◽  
Zinc Oxide Films ◽  
Process Pressure ◽  
Oxygen Ratio

Porous films of metals and metal oxides exhibit larger surface areas and higher reactivities than those of dense films. Therefore, they have gained growing attention as potential materials for use in various applications. This study reports the use of a modified direct current magnetron sputtering method to form porous Zn-ZnO composite films, wherein a subsequent wet post-oxidation process is employed to fabricate pure porous ZnO films. The porous Zn-ZnO composite films were initially formed in clusters, and evaluation of their resulting properties allowed the optimal conditions to be determined. An oxygen ratio of 0.3% in the argon gas flow resulted in the best porosity, while a process pressure of 14 mTorr was optimal. Following deposition, porous ZnO films were obtained through rapid thermal annealing in the presence of water vapor, and the properties and porosities of the obtained films were analyzed. An oxidation temperature of 500 °C was optimal, with an oxidation time of 5 min giving a pure ZnO film with 26% porosity. Due to the fact that the films produced using this method are highly reliable, they could be employed in applications that require large specific surface areas, such as sensors, supercapacitors, and batteries.

Characterization of Pulsed Laser Deposited Zinc Oxide

1992 ◽  
Vol 276 ◽  
Author(s):  
N. J. Ianno ◽  
L. McConville ◽  
N. Shaikh
Keyword(s):  
Zinc Oxide ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Piezoelectric Response ◽  
Zno Films ◽  
Zinc Oxide Films ◽  
Substrate Temperatures ◽  
532 Nm ◽  
Deposited Films

ABSTRACTThe pulsed laser deposition of zinc oxide films (ZnO) has been studied as a function of laser wavelength, and substrate temperature. The deposited films were characterized by x-ray diffractometry, Auger electron spectroscopy, and scanning electron microscopy. Highly textured (002) ZnO films have been deposited at substrate temperatures of 300 C with laser wavelengths of 532 nm and 248 nm. However, the energy fluence of 248 nm radiation controls the degree of texturing, allowing highly textured films to be deposited at room temperature.Smart structures based on embedded, textured ZnO coated fibers, and wires exhibit excellent piezoelectric response to external stress.

scholarly journals RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering

2007 ◽  
Vol 2007 ◽  
pp. 1-5 ◽  
Author(s):  
Chaoyang Li ◽  
Mamoru Furuta ◽  
Tokiyoshi Matsuda ◽  
Takahiro Hiramatsu ◽  
Hiroshi Furuta ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Zinc Oxide Films ◽  
Deposition Power ◽  
Comparison Measurements

Polycrystalline zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering under different powers. The XRD results showed that ZnO crystallite size along c-axis decreased by 43% with deposition power increased from 60 W to 300 W, increased 36% with annealing temperature rising to400∘C. TDS measurement revealed that the desorption peaks of both atomic Zn (60 W-deposited) and oxygen molecule (180 W and 300 W-deposited) obtained from ZnO films were originated from300∘C. When annealing temperature was higher than300∘C, the sheet resistance dramatically decreased, and compressive stress in the (002) plane changed to tensile stress as well. The comparison measurements of ZnO films crystallinity strongly suggested that both lower deposition power and certain thermal annealing temperature over300∘Cwould contribute to the formation of high quality ZnO films.

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