A majority‐carrier camel diode

1979 ◽  
Vol 35 (1) ◽  
pp. 63-65 ◽  
Author(s):  
J. M. Shannon
Keyword(s):  
Majority Carrier ◽  
Camel Diode

A novel normally‐off camel diode gate GaAs field‐effect transistor

1982 ◽  
Vol 40 (9) ◽  
pp. 834-836 ◽  
Author(s):  
T. J. Drummond ◽  
T. Wang ◽  
W. Kopp ◽  
H. Morkoç ◽  
R. E. Thorne ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Camel Diode

A novel camel diode gate GaAs FET

1982 ◽  
Vol 3 (4) ◽  
pp. 86-88 ◽  
Author(s):  
W. Kopp ◽  
T.J. Drummond ◽  
T. Wang ◽  
H. Morkoc ◽  
S.L. Su
Keyword(s):  
Camel Diode

Damage in High Energy Light Ions Irradiated Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
P. Leveque ◽  
S. Godey ◽  
P.O. Renault ◽  
E. Ntsoenzok ◽  
J.F. Barbot
Keyword(s):  
Silicon Carbide ◽  
Surface Layer ◽  
Energy Transfer ◽  
High Energy ◽  
Alpha Particles ◽  
Defect Production ◽  
Majority Carrier ◽  
Reflectivity Spectra ◽  
Light Ions ◽  
Compensation Layer

AbstractCommercial n-type 4H-SiC wafers were implanted with doses of MeV alpha particles, high enough to cause majority carrier modification. Analysis of infrared reflectivity spectra shows that the implanted crystals can be divided into three layers: a surface layer of about 30 nm followed by a compensation layer where the energy transfer of the incident particles is low and an overdoping layer in the region of maximum defect production, i.e. near the theoretical mean range of ions Rp

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