Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition

1983 ◽  
Vol 42 (5) ◽  
pp. 430-432 ◽  
Author(s):  
M. A. Khan ◽  
R. A. Skogman ◽  
R. G. Schulze ◽  
M. Gershenzon
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Metalorganic Chemical

Electrical properties of GaP on Si grown by metalorganic chemical vapor deposition

1993 ◽  
Vol 132 (3-4) ◽  
pp. 414-418 ◽  
Author(s):  
T. Soga ◽  
T. Suzuki ◽  
M. Mori ◽  
Z.K. Jiang ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 3 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
A. Rybaltowski ◽  
Xiaolong Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multi Quantum Well ◽  
Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

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