Shallow junction formation by preamorphization with tin implantation

1986 ◽  
Vol 49 (10) ◽  
pp. 575-577 ◽  
Author(s):  
M. Delfino ◽  
D. K. Sadana ◽  
A. E. Morgan
Keyword(s):  
Shallow Junction ◽  
Junction Formation

Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation

2004 ◽  
Vol 96 (1) ◽  
pp. 919-921 ◽  
Author(s):  
Lin Shao ◽  
John Chen ◽  
Jianming Zhang ◽  
D. Tang ◽  
Sanjay Patel ◽  
...  
Keyword(s):  
Point Defect ◽  
Ion Beams ◽  
Defect Engineering ◽  
Shallow Junction ◽  
Junction Formation

Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film

1998 ◽  
Vol 34 (25) ◽  
pp. 2436
Author(s):  
T. Oishi ◽  
A. Furukawa ◽  
K. Shiozawa ◽  
Y. Abe ◽  
Y. Tokuda
Keyword(s):  
Oxide Film ◽  
Ion Implantation ◽  
High Performance ◽  
Shallow Junction ◽  
Thin Oxide Film ◽  
Junction Formation ◽  
Thin Oxide ◽  
Length Reduction

A defect behavior in boron shallow junction formation of Si under low-temperature pre-anneal and non-melt-laser anneal

2010 ◽  
Author(s):  
Suhei Hara ◽  
Yusuke Shigenaga ◽  
Satoru Matsumoto ◽  
Genshu Fuse ◽  
Susumu Sakuragi
Keyword(s):  
Low Temperature ◽  
Shallow Junction ◽  
Junction Formation ◽  
Laser Anneal ◽  
Defect Behavior

Gas immersion laser doping (GILD) for ultra-shallow junction formation

2004 ◽  
Vol 453-454 ◽  
pp. 106-109 ◽  
Author(s):  
G. Kerrien ◽  
T. Sarnet ◽  
D. Débarre ◽  
J. Boulmer ◽  
M. Hernandez ◽  
...  
Keyword(s):  
Shallow Junction ◽  
Laser Doping ◽  
Junction Formation

Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments

2003 ◽  
Vol 208-209 ◽  
pp. 345-351 ◽  
Author(s):  
M. Hernandez ◽  
J. Venturini ◽  
D. Zahorski ◽  
J. Boulmer ◽  
D. Débarre ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Thermal Processing ◽  
Shallow Junction ◽  
Junction Formation ◽  
Laser Thermal Processing ◽  
Comparison With Experiments

Hydrogen Etching Effects During Plasma Doping Processes and Impact on Shallow Junction Formation

1995 ◽  
Vol 396 ◽  
Author(s):  
Shu Qin ◽  
James D. Bernstein ◽  
Chung Chan
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Impurity Profile ◽  
Device Structure ◽  
Hydrogen Etching ◽  
Shallow Junction ◽  
Dopant Profile ◽  
Plasma Doping ◽  
Junction Formation ◽  
Hydrogen Radicals

AbstractHydrogen etching effects in plasma ion implantation (PII) doping processes alter device structure and implant dopant profile and reduce the retained implant dose. This has particular relevance to the shallow junction devices of ultra large scale integrated circuits (ULSI). Hydrogen etching of semiconductor materials including Si, poly-Si, SiO2, Al, and photoresist films have been investigated. The effects of varying different PII process parameters are presented. The experimental data show that the spontaneous etching by hydrogen radicals enhanced by ion bombardment is responsible for the etching phenomena. A computer simulation is used to predict the as-implanted impurity profile and the retained implant dose for a shallow junction doping when the etching effect is considered.

Ultra Shallow Junction Formation by B+/BF2+ Implantation at Energy of 0.5 KEV

1998 ◽  
Vol 532 ◽  
Author(s):  
M. Kase ◽  
Y Kikuchi ◽  
H. Niwa ◽  
T. Kimura
Keyword(s):  
Junction Depth ◽  
Shallow Junction ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Junction Formation

ABSTRACTThis paper describes ultra shallow junction formation using 0.5 keV B+/BF2+ implantation, which has the advantage of a reduced channeling tail and no transient enhanced diffusion. In the case of l × 1014 cm−2, 0.5 keV BF2 implantation a junction depth of 19 nm is achieved after RTA at 950°C.

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