Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film

1998 ◽  
Vol 34 (25) ◽  
pp. 2436
Author(s):  
T. Oishi ◽  
A. Furukawa ◽  
K. Shiozawa ◽  
Y. Abe ◽  
Y. Tokuda
Keyword(s):  
Oxide Film ◽  
Ion Implantation ◽  
High Performance ◽  
Shallow Junction ◽  
Thin Oxide Film ◽  
Junction Formation ◽  
Thin Oxide ◽  
Length Reduction

KINETICS OF THIN OXIDE FILM GROWTH ON METAL CRYSTALS

2000 ◽  
Vol 07 (01n02) ◽  
pp. 135-139 ◽  
Author(s):  
V. P. ZHDANOV ◽  
P. R. NORTON
Keyword(s):  
Oxide Film ◽  
Metal Oxide ◽  
Metal Ions ◽  
Film Growth ◽  
Phase Interface ◽  
Oxide Interface ◽  
Thin Oxide Film ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Kinetics Of

A seminal model describing the kinetics of growth of thin oxide films on metal crystals was proposed by Cabrera and Mott (CM). The model is based on the assumption that the growth is limited by the field-facilitated activated jumps of metal ions located in steps on the metal–oxide interface. We generalize the CM model by (i) exploring the interplay of jumps of metal ions from the step and terrace sites at the metal–oxide interface, and (ii) scrutinizing the processes at the oxide–gas-phase interface. The former factor is found to change the physical meaning of the parameters in the CM growth law. The latter factor results in modification of the growth law. In particular, the oxidation kinetics becomes dependent on the O2 pressure. More specifically, the oxidation rate is predicted to increase with increasing pressure. This effect is, however, rather weak and becomes progressively weaker with increasing oxide film thickness.

Effect of Thin Oxide Film on Breakdown Voltage of SiliconN+PJunction

1974 ◽  
Vol 13 (2) ◽  
pp. 367-368 ◽  
Author(s):  
Kazushige Matsumoto ◽  
Yuichi Haneta
Keyword(s):  
Oxide Film ◽  
Breakdown Voltage ◽  
Thin Oxide Film ◽  
Thin Oxide
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