In situ observation on electron beam induced chemical vapor deposition by Auger electron spectroscopy

1987 ◽  
Vol 51 (9) ◽  
pp. 646-648 ◽  
Author(s):  
Shinji Matsui ◽  
Katsumi Mori
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Auger Electron Spectroscopy ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
In Situ Observation

Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy

2004 ◽  
Vol 43 (10) ◽  
pp. 6974-6977 ◽  
Author(s):  
Suguru Noda ◽  
Takeshi Tsumura ◽  
Jota Fukuhara ◽  
Takashi Yoda ◽  
Hiroshi Komiyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Auger Electron Spectroscopy ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor

Anomalous Selective Tungsten- Growth by -Chemical- Vapor -Deposition

1996 ◽  
Vol 427 ◽  
Author(s):  
Yu-Jane Mei ◽  
Ting-Chang Chang ◽  
Jeng-Dong Sheu ◽  
Wen-Kuan Yeh ◽  
Fu-Ming Pan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Auger Electron Spectroscopy ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor ◽  
Deep Submicron ◽  
Anomalous Feature ◽  
Via Hole ◽  
Hole Bottom

AbstractSelective tungsten chemical vapor deposition (W-CVD) is one of the most attractive technique for filling deep submicron contact hole and via hole for the ULSI application. In this work, we firstly find out the anomalous selective W growth for the contact hole. The tungsten only nucleates from the side ring of the contact hole bottom. Several predeposition treatments prior to W growth can improve this anomalous feature and excellently selective W growth can be achieved. Auger electron spectroscopy (AES) is utilized to investigate the interface of Si/W. A model has been proposed to explain this anomalous selective tungsten growth.

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