In-situ Auger electron spectroscopy of silicon thin films fabricated using ArF excimer laser-induced chemical vapor deposition and the oxidation process

1994 ◽  
Vol 79-80 ◽  
pp. 459-464 ◽  
Author(s):  
Katsuhiko Mutoh ◽  
Shigeru Takeyama ◽  
Yuka Yamada ◽  
Takeo Miyata
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Oxidation Process ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Arf Excimer Laser

The Electrical Properties of In-situ Doped Polycrystalline Silicon Thin Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at 250°C

1997 ◽  
Vol 472 ◽  
Author(s):  
Yeu-Long Jiang ◽  
Ruo-Yu Wang ◽  
Huey-Liang Hwang ◽  
Tri-Rung Yew
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Dopant Concentration ◽  
Chemical Vapor ◽  
Silicon Thin Films

AbstractThe phosphorus doped polycrystalline silicon thin films were grown by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD) at 250°C. The doping gas PH3 was in-situ added with SiH4 gas during the films deposition. All films were deposited with 90% hydrogen dilution ratio. The resistivity of the films is varied from 0.2 to 7Ω-cm and decrease as the PH3/SiH4 gas ratio increase from (3/100 to 7/100). From the SIMS data, the doping concentration is all about 1020cm-3. The activation energy is decreased from 0.35 eV to 0.12 eV as the dopant concentration increased from 0.8×10 20cm-3 to 4.7×10 20cm-3. From the Hall measurements, the carrier mobility is about 2∼4 cm2/V. sec, and the carrier concentration is the 0.5∼1% of the dopant concentration. The gain boundary trap density predicted by the trapping model is about 4×l013cm” 2-2

In Situ Ellipsometric Monitoring of the Growth of Polycrystalline Silicon Thin Films by RF Plasma Chemical Vapor Deposition

1994 ◽  
Vol 33 (Part 1, No. 7B) ◽  
pp. 4191-4194 ◽  
Author(s):  
Kunihide Tachibana ◽  
Tatsuru Shirafuji ◽  
Yasuaki Hayashi ◽  
Shinji Maekawa ◽  
Tatsuo Morita
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Thin Films

Stranski–Krastanov Growth of Tungsten during Chemical Vapor Deposition Revealed by Micro-Auger Electron Spectroscopy

2004 ◽  
Vol 43 (10) ◽  
pp. 6974-6977 ◽  
Author(s):  
Suguru Noda ◽  
Takeshi Tsumura ◽  
Jota Fukuhara ◽  
Takashi Yoda ◽  
Hiroshi Komiyama ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Auger Electron Spectroscopy ◽  
Vapor Deposition ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Chemical Vapor

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

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