Anomalous Selective Tungsten- Growth by -Chemical- Vapor -Deposition
Keyword(s):
Via Hole
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AbstractSelective tungsten chemical vapor deposition (W-CVD) is one of the most attractive technique for filling deep submicron contact hole and via hole for the ULSI application. In this work, we firstly find out the anomalous selective W growth for the contact hole. The tungsten only nucleates from the side ring of the contact hole bottom. Several predeposition treatments prior to W growth can improve this anomalous feature and excellently selective W growth can be achieved. Auger electron spectroscopy (AES) is utilized to investigate the interface of Si/W. A model has been proposed to explain this anomalous selective tungsten growth.
2004 ◽
Vol 43
(10)
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pp. 6974-6977
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2011 ◽
Vol 37
(4)
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pp. 1301-1306
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2002 ◽
Vol 20
(1)
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pp. 116
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