On the Ge shallow-to-deep level transition in Al-rich AlGaN

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

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Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

MRS Proceedings ◽

10.1557/proc-719-f8.11 ◽

2002 ◽

Vol 719 ◽

Cited By ~ 1

Author(s):

Masashi Kato ◽

Masaya Ichimura ◽

Eisuke Arai ◽

Shigehiro Nishino

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Activation Energies ◽

Thickness Dependence ◽

Epitaxial Layers ◽

Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

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Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

MRS Proceedings ◽

10.1557/proc-766-e8.5 ◽

2003 ◽

Vol 766 ◽

Author(s):

V. Ligatchev ◽

T.K.S. Wong ◽

T.K. Goh ◽

Rusli Suzhu Yu

Keyword(s):

Deep Level ◽

Dielectric Films ◽

Silicon Substrates ◽

Reverse Bias Voltage ◽

Defect States ◽

Single Side ◽

Sandwich Type ◽

Transient Spectroscopy ◽

P Type ◽

Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

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EXPERIMENTAL VERIFICATION OF DLTS MODELS

CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE ◽

10.30987/conferencearticle_5e028210b72ba9.48046910 ◽

2019 ◽

Author(s):

Nataliya Mitina ◽

Vladimir Krylov

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Data Processing ◽

Experimental Verification ◽

Deep Level ◽

Deep Levels ◽

Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

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DEEP LEVELS' ACTIVATION ENERGY DEPENDENCE ON MEASUREMENT MODES

CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE ◽

10.30987/conferencearticle_5e028210156607.46541827 ◽

2019 ◽

Author(s):

Aleksey Bogachev ◽

Vladimir Krylov

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Energy Dependence ◽

Deep Level ◽

Deep Levels ◽

Blocking Voltage

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure by capacitive relaxation spectroscopy of deep levels at various values of the blocking voltage are considered.

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Two-Dimensional Local Deep-Level Transient Spectroscopy Imaging Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

ISTFA 2016: Conference Proceedings from the 42nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2016p0441 ◽

2016 ◽

Author(s):

N. Chinone ◽

Y. Cho ◽

R. Kosugi ◽

Y. Tanaka ◽

S. Harada ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Higher Order ◽

Trap Density ◽

New Technique ◽

Two Dimensional ◽

Nonlinear Dielectric ◽

Annealing Conditions ◽

Transient Spectroscopy ◽

A New Technique

Abstract A new technique for local deep level transient spectroscopy (DLTS) imaging using super-higher-order scanning nonlinear dielectric microscopy is proposed. Using this technique. SiCVSiC structure samples with different post oxidation annealing conditions were measured. We observed that the local DLTS signal decreases with post oxidation annealing (POA), which agrees with the well-known phenomena that POA reduces trap density. Furthermore, obtained local DLTS images had dark and bright areas, which is considered to show the trap distribution at/near SiCVSiC interface.

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