Electrical breakdown strength enhancement in aluminum scandium nitride through a compositionally modulated periodic multilayer structure

2021 ◽  
Vol 130 (14) ◽  
pp. 144101
Author(s):  
Jeffrey X. Zheng ◽  
Dixiong Wang ◽  
Pariasadat Musavigharavi ◽  
Merrilyn Mercy Adzo Fiagbenu ◽  
Deep Jariwala ◽  
...  
Materials ◽  
2019 ◽  
Vol 12 (21) ◽  
pp. 3562 ◽  
Author(s):  
Chang Liu ◽  
Yiwen Xu ◽  
Daoguang Bi ◽  
Bing Luo ◽  
Fuzeng Zhang ◽  
...  

AlN nanoparticles were added into commercial high-temperature-vulcanized silicon rubber composites, which were designed for high-voltage outdoor insulator applications. The composites were systematically studied with respect to their mechanical, electrical, and thermal properties. The thermal conductivity was found to increase greatly (>100%) even at low fractions of the AlN fillers. The electrical breakdown strength of the composites was not considerably affected by the AlN filler, while the dielectric constants and dielectric loss were found to be increased with AlN filler ratios. At higher doping levels above 5 wt% (~2.5 vol%), electrical tracking performance was improved. The AlN filler increased the tensile strength as well as the hardness of the composites, and decreased their flexibility. The hydrophobic properties of the composites were also studied through the measurements of temperature-dependent contact angle. It was shown that at a doping level of 1 wt%, a maximum contact angle was observed around 108°. Theoretical models were used to explain and understand the measurement results. Our results show that the AlN nanofillers are helpful in improving the overall performances of silicon rubber composite insulators.


1989 ◽  
Vol 162 ◽  
Author(s):  
G. A. J. Amaratunga ◽  
W. I. Milne ◽  
A. Putnis ◽  
K. K. Chan ◽  
K. J. Clay ◽  
...  

ABSTRACTThin C films deposited from a CH4/Ar plasma on Si substrates kept at 20C are shown to be semiconducting. The semiconducting properties are associated with the poly-crystalline diamond grains present within the films. Diode type I-V characteristics observed from AVC/Si verticle structures are explained by the action of a C-Si heterojunction. A band gap of 2eV, a resistivity of 106Ω.cm and an electrical breakdown strength of 5.106 V/cm are estimated for the C.


IEEE Access ◽  
2019 ◽  
Vol 7 ◽  
pp. 73448-73454 ◽  
Author(s):  
Suning Liang ◽  
Feipeng Wang ◽  
Zhengyong Huang ◽  
Weigen Chen ◽  
Youyuan Wang ◽  
...  

2017 ◽  
Vol 07 (01) ◽  
pp. 1750007 ◽  
Author(s):  
Gang Liu ◽  
Wentao Jiang ◽  
Jingyong Jiao ◽  
Li Liu ◽  
Ziyang Wang ◽  
...  

Ba[Formula: see text]Sr[Formula: see text]TiO3 ceramics with or without ZnO have been prepared by traditional solid state reaction method. The XRD analysis showed that the doped Zn[Formula: see text] ions diffused into the BST crystal lattice, resulting in the variation of dielectric properties. Especially the dielectric constant at Curie point decreased with doping ZnO content when it is lower than 0.5[Formula: see text]mol%. Due to the promotion of sintering, doping ZnO can enhance the density of ceramics but increase grain size. However, ZnO is a kind of semiconductor and can lead to the decrease in electrical breakdown strength value.


RSC Advances ◽  
2015 ◽  
Vol 5 (110) ◽  
pp. 90343-90353 ◽  
Author(s):  
Hui Zhang ◽  
Yan Shang ◽  
Mingxia Li ◽  
Hong Zhao ◽  
Xuan Wang ◽  
...  

The mechanism of the valerophenone voltage stabilizer for increasing the electrical breakdown strength of cross-linked polyethylene is expected to provide reliable information to prepare insulation material for high voltage cables up to 500 kV.


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