Carbon - silicon heterojunction diodes formed by CH4/ Ar rf plasma thin film deposition on Si substrates
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Type I
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ABSTRACTThin C films deposited from a CH4/Ar plasma on Si substrates kept at 20C are shown to be semiconducting. The semiconducting properties are associated with the poly-crystalline diamond grains present within the films. Diode type I-V characteristics observed from AVC/Si verticle structures are explained by the action of a C-Si heterojunction. A band gap of 2eV, a resistivity of 106Ω.cm and an electrical breakdown strength of 5.106 V/cm are estimated for the C.
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2008 ◽
Vol 80
(9)
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pp. 1919-1930
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