scholarly journals Ultrabroadband electrically controllable terahertz modulation based on GaAs Schottky diode structure

APL Photonics ◽  
2021 ◽  
Vol 6 (11) ◽  
pp. 111301
Author(s):  
Xudong Liu ◽  
Hao Chen ◽  
Shixiong Liang ◽  
Meng Zhang ◽  
Zhendong Jiang ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Diode Structure

Porous Silicon Organic Vapor and Humidity Sensor

1996 ◽  
Vol 459 ◽  
Author(s):  
M. C. Poon ◽  
J.K.O. Sin ◽  
H. Wong ◽  
P. G. Han ◽  
W. H. Kwok ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Schottky Diode ◽  
Room Temperature ◽  
Humidity Sensor ◽  
Ethanol Vapor ◽  
Electrical Contacts ◽  
Diode Structure ◽  
Organic Vapor ◽  
Humidity Change

ABSTRACTThis paper presents new organic vapor sensitive device using anodized porous silicon (PS). The sensor has aluminum (Al)/PS/p-Si/Al Schottky diode structure and sensitivity at room temperature in 2600 ppm acetone, methanol, 2-propanol and ethanol is about 4, 5, 10 and 40 times respectively. The sensitivity in 800–2600 ppm ethanol vapor is 2 to 40 times. The diode sensor can be converted into an Al/PS/Al resistor sensor by switching the electrical contacts, and the sensitivity is about 500 times for a humidity change of 43–75%. All sensors have response time of about 0.5 min. The sensitivity is stable with time and the PS sensor can be integrated into VLSI Si devices to form novel microelectronic systems.

Room temperature H2 detection based on Pd/SiNWs/p-Si Schottky diode structure

2016 ◽  
Vol 227 ◽  
pp. 515-523 ◽  
Author(s):  
L.S. Zhu ◽  
J. Zhang ◽  
X.W. Xu ◽  
Y.Z. Yu ◽  
X. Wu ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Diode Structure

High-resistivity GaN homoepitaxial layer studied by Schottky diode structure

2009 ◽  
Vol 45 (17) ◽  
pp. 910 ◽  
Author(s):  
H. Shi ◽  
H. Lu ◽  
D. Chen ◽  
R. Zhang ◽  
Y. Zheng
Keyword(s):  
Schottky Diode ◽  
Diode Structure ◽  
High Resistivity

scholarly journals Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure

2020 ◽  
Vol 7 (10) ◽  
pp. 105902
Author(s):  
E Saloma ◽  
S Alcántara ◽  
N Hernández-Como ◽  
J Villanueva-Cab ◽  
M Chavez ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Photoelectric Effect ◽  
Diode Structure

600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination

2007 ◽  
Vol 556-557 ◽  
pp. 857-860 ◽  
Author(s):  
Tsuyoshi Yamamoto ◽  
Takeshi Endo ◽  
Nobuyuki Kato ◽  
Hiroki Nakamura ◽  
Toshio Sakakibara
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diode ◽  
Elevated Temperatures ◽  
Diode Structure ◽  
Maximum Current ◽  
Power Application

4H-SiC SBDs have been commercialized for power application devices. However, the maximum current of these SBDs is 20A. In this work, we designed a JBS (junction barrier Schottky) diode structure and the fabrication processes to be optimized. The current and breakdown voltage were over 100 A and 660 V at Ir = 1 mA/cm2, respectively. The recovery characteristics of the JBS diode are much superior to those of the Si-FRD while it is comparable to those of the commercially available SiC-SBD at elevated temperatures up to 125°C..

A novel biased anti-parallel Schottky diode structure for subharmonic mixing

1994 ◽  
Vol 4 (10) ◽  
pp. 341-343 ◽  
Author(s):  
Trong-Huang Lee ◽  
Chen-Yu Chi ◽  
J.R. East ◽  
G.M. Rebeiz ◽  
G.I. Haddad
Keyword(s):  
Schottky Diode ◽  
Diode Structure

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

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