A multi-purpose high-pressure and high temperature gas-flow cell for operando optical Raman spectroscopy

2021 ◽  
Vol 92 (11) ◽  
pp. 113003
Author(s):  
Changchun Yang ◽  
Weifeng Huang ◽  
Hang Wei ◽  
Wei Xu ◽  
Augusto Marcelli
2010 ◽  
Vol 251 ◽  
pp. 012090 ◽  
Author(s):  
R Haynes ◽  
S T Norberg ◽  
S G Eriksson ◽  
M A H Chowdhury ◽  
C M Goodway ◽  
...  

2014 ◽  
Vol 47 (1) ◽  
pp. 245-255 ◽  
Author(s):  
Jerome Andrieux ◽  
Christophe Chabert ◽  
Anthony Mauro ◽  
Hugo Vitoux ◽  
Bernard Gorges ◽  
...  

A high-pressure–high-temperature gas-loading system (GLS) is described for combinedoperandoX-ray diffraction and mass spectrometry investigations during catalysed gas/solid or liquid/solid reactions. The pressure cell consists of a single-crystal sapphire tube which serves as both high-pressure container and reaction cell, with up to 6 mm inner diameter. The system can operate in two different configurations, under either static high pressure or dynamic pressurized flow. The transportable reaction cell can be filled under inert atmosphere inside a glove box, enabling studies with oxygen-sensitive compounds to be conducted. The five main benefits of this system can be summarized as follows: (i) the temperature, pressure and gas-flow ranges of 298–1273 K, 10−3 mbar–200 bar (0.1–2 × 107 Pa) and 0–1 l min−1, respectively, (ii) the combination of different gases, (iii) the flexibility of the cell design, (iv) the full rotation of the pressurized cell, and (v) the combination of X-ray diffraction and mass spectrometry as analytical tools. These key points open new possibilities for studying the evolution of catalysts or compounds from a fundamental point of view as well as for industrial applications, in both cases inoperandoconditions.


Author(s):  
Dmitry V. Nesterovich ◽  
Oleg G. Penyazkov ◽  
Yu. A. Stankevich ◽  
M. S. Tretyak ◽  
Vladimir V. Chuprasov ◽  
...  

1999 ◽  
Vol 572 ◽  
Author(s):  
Jingxi Sun ◽  
J. M. Redwing ◽  
T. F. Kuech

ABSTRACTA comparative study of two different MOVPE reactors used for GaN growth is presented. Computational fluid dynamics (CFD) was used to determine common gas phase and fluid flow behaviors within these reactors. This paper focuses on the common thermal fluid features of these two MOVPE reactors with different geometries and operating pressures that can grow device-quality GaN-based materials. Our study clearly shows that several growth conditions must be achieved in order to grow high quality GaN materials. The high-temperature gas flow zone must be limited to a very thin flow sheet above the susceptor, while the bulk gas phase temperature must be very low to prevent extensive pre-deposition reactions. These conditions lead to higher growth rates and improved material quality. A certain range of gas flow velocity inside the high-temperature gas flow zone is also required in order to minimize the residence time and improve the growth uniformity. These conditions can be achieved by the use of either a novel reactor structure such as a two-flow approach or by specific flow conditions. The quantitative ranges of flow velocities, gas phase temperature, and residence time required in these reactors to achieve high quality material and uniform growth are given.


2018 ◽  
Vol 38 (3) ◽  
pp. 212-223 ◽  
Author(s):  
Chaoshuai Zhao ◽  
Heping Li ◽  
Jianjun Jiang ◽  
Yu He ◽  
Wen Liang

2004 ◽  
Vol 207 (1-2) ◽  
pp. 47-58 ◽  
Author(s):  
Isabelle Martinez ◽  
Carmen Sanchez-Valle ◽  
Isabelle Daniel ◽  
Bruno Reynard

2002 ◽  
Vol 2002 (0) ◽  
pp. 93-94
Author(s):  
Yutaka TAKENO ◽  
Yoshinori OTANI ◽  
Hiroaki KANEMOTO

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