Precise localization of DBD plasma streamers using topographically patterned insulators for maskless structural and chemical modification of surfaces

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

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Spectral Changes Induced by Alkaline pH and Specific Chemical Modification of Amino Acid Residues in the Light-Harvesting II Antenna Complex from Ectothiorhodospira sp.

Photochemistry and Photobiology ◽

10.1562/0031-8655(1999)069<0275:scibap>2.3.co;2 ◽

1999 ◽

Vol 69 (3) ◽

pp. 275 ◽

Cited By ~ 2

Author(s):

André Buche ◽

Rafael Picorel

Keyword(s):

Amino Acid ◽

Chemical Modification ◽

Light Harvesting ◽

Amino Acid Residues ◽

Alkaline Ph ◽

Specific Chemical ◽

Antenna Complex ◽

Spectral Changes ◽

Specific Chemical Modification

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Super-Conducting Quantum Interference Device Technique: 3-D Localization of a Short within a Flip Chip Assembly

ISTFA 2001: Conference Proceedings from the 27th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2001p0069 ◽

2001 ◽

Author(s):

Kendall Scott Wills ◽

Omar Diaz de Leon ◽

Kartik Ramanujachar ◽

Charles P. Todd

Keyword(s):

Form Factor ◽

Failure Analysis ◽

Time Domain ◽

Quantum Interference ◽

Flip Chip ◽

Time Domain Reflectometry ◽

Interfacial Region ◽

Precise Localization ◽

Super Conducting ◽

Accuracy Of Measurement

Abstract In the current generations of devices the die and its package are closely integrated to achieve desired performance and form factor. As a result, localization of continuity failures to either the die or the package is a challenging step in failure analysis of such devices. Time Domain Reflectometry [1] (TDR) is used to localize continuity failures. However the accuracy of measurement with TDR is inadequate for effective localization of the failsite. Additionally, this technique does not provide direct 3-Dimenstional information about the location of the defect. Super-conducting Quantum Interference Device (SQUID) Microscope is useful in localizing shorts in packages [2]. SQUID microscope can localize defects to within 5um in the X and Y directions and 35um in the Z direction. This accuracy is valuable in precise localization of the failsite within the die, package or the interfacial region in flipchip assemblies.

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Precise Localization of 28 nm via Chain Resistive Defect Using EBAC and Nanoprobing

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0067 ◽

2012 ◽

Author(s):

P. Larré ◽

H. Tupin ◽

C. Charles ◽

R.H. Newton ◽

A. Reverdy

Keyword(s):

Electron Beam ◽

Failure Analysis ◽

Test Structure ◽

Precise Localization ◽

Isolation Method ◽

Accurate Detection ◽

Conventional Methods ◽

Technology Nodes ◽

Tem Lamella

Abstract As technology nodes continue to shrink, resistive opens have become increasingly difficult to detect using conventional methods such as AVC and PVC. The failure isolation method, Electron Beam Absorbed Current (EBAC) Imaging has recently become the preferred method in failure analysis labs for fast and highly accurate detection of resistive opens and shorts on a number of structures. This paper presents a case study using a two nanoprobe EBAC technique on a 28nm node test structure. This technique pinpointed the fail and allowed direct TEM lamella.

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