Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Deep Level ◽

Interface State ◽

High Electron ◽

High Electron Mobility ◽

Voltage Instability ◽

Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/ln0·25Ga0·75As/Al0·3Ga0·7As high electron mobility transistors

Materials Science and Technology ◽

10.1179/mst.1995.11.10.1079 ◽

1995 ◽

Vol 11 (10) ◽

pp. 1079-1082 ◽

Cited By ~ 1

Author(s):

Y. Haddab ◽

M. A. Py ◽

J.-M. Bonard ◽

H.-J. Bühlmann ◽

M. lIegems

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Deep Level ◽

Drain Current ◽

High Electron ◽

High Electron Mobility ◽

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.3702458 ◽

2012 ◽

Vol 111 (7) ◽

pp. 073713 ◽

Cited By ~ 10

Author(s):

Salah Saadaoui ◽

Mohamed Mongi Ben Salem ◽

Malek Gassoumi ◽

Hassen Maaref ◽

Christophe Gaquière

Keyword(s):

Electron Mobility ◽

Deep Level ◽

High Electron ◽

High Electron Mobility ◽

A deep‐level transient spectroscopy study of high electron mobility transistors subjected to lifetime stress tests

Journal of Applied Physics ◽

10.1063/1.343667 ◽

1989 ◽

Vol 66 (11) ◽

pp. 5613-5617 ◽

Cited By ~ 9

Author(s):

R. Magno ◽

R. Shelby ◽

W. T. Anderson

Keyword(s):

Electron Mobility ◽

Deep Level ◽

High Electron ◽

Spectroscopy Study ◽

Stress Tests ◽

High Electron Mobility ◽

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Applied Physics Letters ◽

10.1063/1.4813862 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033509 ◽

Cited By ~ 45

Author(s):

A. Sasikumar ◽

A. R. Arehart ◽

S. Martin-Horcajo ◽

M. F. Romero ◽

Y. Pei ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level ◽

Drain Current ◽

High Electron ◽

High Electron Mobility ◽

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep Level Transient Spectroscopy

physica status solidi (a) ◽

10.1002/pssa.202100227 ◽

2021 ◽

Author(s):

Po-Chun (Brent) Hsu ◽

Eddy Simoen ◽

Hu Liang ◽

Brice De Jaeger ◽

Benoit Bakeroot ◽

...

Keyword(s):

Deep Level ◽

Low Frequency ◽

Frequency Noise ◽

Defect Characterization ◽

High Electron ◽

High Electron Mobility ◽

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

Applied Physics Letters ◽

10.1063/1.3326079 ◽

2010 ◽

Vol 96 (7) ◽

pp. 072107 ◽

Cited By ~ 68

Author(s):

W. Chikhaoui ◽

J.-M. Bluet ◽

M.-A. Poisson ◽

N. Sarazin ◽

C. Dua ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level ◽

High Electron ◽

Gate Leakage ◽

Spectroscopy Analysis ◽

High Electron Mobility ◽

Deep level transient spectroscopy of n-AlGaAs/GaAs high electron mobility transistors

Electronics Letters ◽

10.1049/el:19900108 ◽

1990 ◽

Vol 26 (3) ◽

pp. 159 ◽

Cited By ~ 3

Author(s):

J. Goostray ◽

H. Thomas ◽

D.V. Morgan ◽

E. Kohn ◽

A. Christou ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level ◽

High Electron ◽

High Electron Mobility ◽

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

Semiconductors ◽

10.1134/s1063782613070087 ◽

2013 ◽

Vol 47 (7) ◽

pp. 1008-1012 ◽

Cited By ~ 2

Author(s):

Malek Gassoumi ◽

Hana Mosbahi ◽

Mohamed Ali Zaidi ◽

Christophe Gaquiere ◽

Hassen Maaref

Keyword(s):

Surface Passivation ◽

Deep Level ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Transient Spectroscopy ◽

Effect Of Surface

Threshold Voltage Instability in Al$_{2}$O$_{3}$/GaN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.110202 ◽

2011 ◽

Vol 50 ◽

pp. 110202 ◽

Cited By ~ 25

Author(s):

Sen Huang ◽

Shu Yang ◽

John Roberts ◽

Kevin J. Chen

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Voltage Instability ◽

Electron Mobility Transistors

Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/28/7/074020 ◽

2013 ◽

Vol 28 (7) ◽

pp. 074020 ◽

Cited By ~ 7

Author(s):

Andrew M Armstrong ◽

Andrew A Allerman ◽

Albert G Baca ◽

Carlos A Sanchez

Keyword(s):

Threshold Voltage ◽

Electron Mobility ◽

Deep Level ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors