scholarly journals Static Charged Dust Distribution in the Brans-Dicke Theory

1975 ◽  
Vol 28 (5) ◽  
pp. 585 ◽  
Author(s):  
BK Nayak
Keyword(s):  
Charge Density ◽  
Mass Density ◽  
Charged Dust ◽  
Scalar Interaction ◽  
Theory Of Gravitation ◽  
Dust Distribution

The distribution of static charged dust in the Brans-Dicke theory is considered. It is shown that the ratio of charge density to mass density is related to the scalar interaction '" so that for small values of '" the charge density will far exceed the mass density. This result suggests that the existence of a finite electron can be realized in the Brans-Dicke theory of gravitation through a static charged dust distribution.

scholarly journals Spherically Symmetric Charged Dust Distribution in General Relativity. I. General Solution

1980 ◽  
Vol 33 (4) ◽  
pp. 765 ◽  
Author(s):  
BK Nayak
Keyword(s):  
General Relativity ◽  
General Solution ◽  
Charge Density ◽  
Mass Density ◽  
Maxwell Field ◽  
Charged Dust ◽  
Spherically Symmetric ◽  
Field Equations ◽  
Mathematical Condition ◽  
Dust Distribution

The Einstein-Maxwell field equations characterizing a spherically symmetric charged dust distnbution are solved exactly without imposing any mathematical condition on them. The solution is expressed in terms of two arbitrary variables and these can be chosen to correspond to an arbitrary ratio of charge density to mass density, thus allowing the possibility of understanding the interior of the horizon in a more precise manner.

Cylindrically symmetric charged dust distributions in rigid rotation in general relativity

1968 ◽  
Vol 304 (1476) ◽  
pp. 81-86 ◽  
Keyword(s):  
General Relativity ◽  
Charge Density ◽  
Lorentz Force ◽  
Maxwell Equations ◽  
Mass Density ◽  
Rigid Rotation ◽  
Charged Dust ◽  
Cylindrically Symmetric ◽  
Classical Analogue ◽  
Dust Distribution

The paper presents a family of stationary cylindrically symmetric solutions of the Einstein-Maxwell equations corresponding to a charged dust distribution in rigid rotation. The interesting feature of the solution is that the Lorentz force vanishes everywhere and the ratio of the charge density and mass density may assume arbitrary value. The solutions do not seem to have any classical analogue.

scholarly journals On Stationary Distributions of Charged Dust

1976 ◽  
Vol 29 (2) ◽  
pp. 119 ◽  
Author(s):  
A Banerjee ◽  
N Chakravarty ◽  
SB Dutta Choudhury
Keyword(s):  
Charge Density ◽  
Lorentz Force ◽  
Stationary Distribution ◽  
Arbitrary Constant ◽  
Mass Density ◽  
Charged Dust ◽  
Stationary Distributions ◽  
Incorrect Result

The correct value of the ratio of charge density to mass density is obtained for a stationary distribution of charged dust with vanishing Lorentz force. It is found that the ratio is truly an arbitrary constant, in disagreement with the apparently. incorrect result obtained by Misra et al. (1972).

Lofted charged dust distribution above the Moon surface

2011 ◽  
Vol 59 (14) ◽  
pp. 1795-1803 ◽  
Author(s):  
Vladimir Pines ◽  
Marianna Zlatkowski ◽  
Arnon Chait
Keyword(s):  
Charged Dust ◽  
The Moon ◽  
Dust Distribution

Unperturbed state and solitary structures in an electron-positron plasma having dust impurity and density inhomogeneity

2014 ◽  
Vol 80 (4) ◽  
pp. 629-641 ◽  
Author(s):  
Hitendra K. Malik ◽  
Rakhee Malik
Keyword(s):  
Density Gradient ◽  
Mkdv Equation ◽  
Charged Dust ◽  
Unperturbed State ◽  
Pair Plasma ◽  
Electron Positron ◽  
Electrons And Positrons ◽  
Solitary Structures ◽  
Dust Distribution ◽  
Positively Charged

An electron–positron pair plasma having dust impurity and density non-uniformity is studied for its unperturbed state and evolution of solitary structures under the effect of either positively charged or negatively charged dust grains. Zeroth-order equations are solved to examine the unperturbed state of the plasma via unperturbed potential φ0, drift velocities of the electrons and positrons (ve0 and vp0), and plasma (positron) density gradient np0η. It is observed that the dust distribution affects the gradient np0η significantly, which increases very sharply with a small increment in the dust density gradient nd0η. With relation to the solitary structures, a modified form of Korteweg–deVries equation (mKdV equation) is realized in the said plasma, which reveals that a tailing structure is associated with the soliton (sech2 structure). This tail is less prominent in the present pair plasma, contrary to the observation made in ordinary plasmas having only ions and electrons. The dust impurity is found to influence the solitary structure much significantly and its presence suppresses the rarefactive solitons, which are generally observed in multi-component species plasmas.

scholarly journals Collapse of a Charged Dust Distribution

1973 ◽  
Vol 49 (5) ◽  
pp. 1546-1552 ◽  
Author(s):  
Utpal K. De
Keyword(s):  
Charged Dust ◽  
Dust Distribution

Charged dust distribution in nonrigid rotation

1981 ◽  
Vol 24 (8) ◽  
pp. 2027-2028 ◽  
Author(s):  
S. K. Saha
Keyword(s):  
Charged Dust ◽  
Dust Distribution

Dielectric Properties of Ultra Dense (3 g/cm3) Silicon Nitride Deposited by Hot Wire CVD at Industrially Relevant High Deposition Rates

2007 ◽  
Vol 989 ◽  
Author(s):  
Zomer Silvester Houweling ◽  
Vasco Verlaan ◽  
Karine van der Werf ◽  
Hanno D. Goldbach ◽  
Ruud E I Schropp
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Silicon Nitride ◽  
Charge Density ◽  
Deposition Rate ◽  
Thin Film Transistors ◽  
Etch Rate ◽  
Mass Density ◽  
Hot Wire

AbstractFor silicon nitride (SiNx) deposited at 3 nm/s using hot wire chemical vapor deposition (HWCVD), the mass-density reached an ultra high value of 3.0 g/cm3. Etch rates in a 16BHF solution show that the lowest etch rate occurs for films with a N/Si ratio of 1.2, the ratio where also the maximum in mass density occurs. The thus found etch rate of 7 nm/min is much better than that for PECVD layers, even when made at a much lower deposition rate. The root-mean-square (rms) roughness measured on 300 nm thick SiN1.2 layers is only about 1 nm, which is advantageous for obtaining high field-effect mobility in thin-film transistors. SiN1.2 films have succesfully been tested in “all hot wire” thin film transistors (TFTs). SiNx films with various x values in the range 1.0 < × <1.5 have been incorporated in metal-insulator-semiconductor structures with n-type c-Si wafers to determine their electrical properties from C-V and I-V measurements. We analyzed the behavior of the static dielectric constant, fixed nitride charges and trapped nitride charges as function of N/Si ratio. I-V measurements show that the HW SiNx films with N/Si ≥ 1.33 have high dielectric breakdown fields that exceed 5.9 MV/cm. For these films we deduce a low positive fixed nitride charge density of 6.2-7.8 × 1016 cm-3 from the flat band voltage and from the small hysteresis in the backward sweep we deduce a low fast trapped charge density of 1.3-1.7 × 1011 cm-2. The dielectric constant ε for different compositions is seen not to change appreciably over the whole range and amounts to 6.3 ± 0.1. These high-density SiNx films possess very low tensile stress (down to 16 MPa), which will be helpful in for instance, plastic electronics applications. HWCVD provides high quality a-SiNx materials with good dielectric properties at a high deposition rate.

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