Effect of Excess Lead on Dielectric and Ferroelectric Properties of Alkoxide-Derived Lead Titanate Thin Films

2002 ◽  
Vol 271 (1) ◽  
pp. 309-314
Author(s):  
T. Ohno ◽  
H. Suzuki ◽  
J. Takahashi ◽  
S. Shimada ◽  
T. Ota ◽  
...  
2015 ◽  
Vol 1109 ◽  
pp. 461-465 ◽  
Author(s):  
Nurbaya Zainal ◽  
Mohd Hafiz Wahid ◽  
Mohammad Rusop

Performance of lead titanate, (PbTiO3) thin films have been successfully investigated on microstructural properties, I-V characteristic, dielectric properties, and ferroelectric properties. PbTiO3offers variety of application as transducer, ferroelectric random access memory, transistor, high performance capacitor, sensor, and many more due to its ferroelectric behavior. Preparation of the films are often discussed in order to improve the structural properties, like existence of grain boundaries, particle uniformity, presents of microcrack films, porosities, and many more. Yet, researchers still prepare PbTiO3thin films at high crystallization temperature, certainly above than 600 ̊C to obtain single crystal perovskite structure that would be the reason to gain high spontaneous polarization behavior. Although this will results to high dielectric constant value, the chances that leads to high leakage current is a major failure in device performance. Thus, preparation the thin films at low annealing temperature quite an essential study which is more preferable deposited on low-cost soda lime glass. The study focuses on low annealing temperature of PbTiO3thin films through sol-gel spin coating method and undergo for dielectric and I-V measurements.


2015 ◽  
Vol 3 (5) ◽  
pp. 1035-1043 ◽  
Author(s):  
Alichandra Castro ◽  
Paula Ferreira ◽  
Brian J. Rodriguez ◽  
Paula M. Vilarinho

Nanoporous PbTiO3 films present enhanced tetragonality at lower temperatures than respective dense films. Moreover, the porosity present in the nanoporous films allows an increase of the local piezoelectric response and a decrease of the local coercive field. As a result, these nanoporous films might be used to improve the switching behaviour of ferroelectric thin films.


2004 ◽  
Vol 811 ◽  
Author(s):  
Sonalee Chopra ◽  
Seema Sharma ◽  
T.C. Goel ◽  
R.G. Mendiratta

ABSTRACTFerroelectric lead lanthanum titanate (Pb1−xLaxTi1−x/4O3) (PLTx) thin films (x=0.04,0.08 and 0.12) have been prepared by sol-gel spin coating process on ITO coated 7059 Corning glass substrates. Investigations have been made on the crystal structure, surface morphology, dielectric and ferroelectric properties of the thin films. For a better understanding of the crystallization mechanism, the structural investigations were carried out at various annealing temperatures (350°C, 450°C, 550°C and 650°C). Characterization of these films by X-ray diffraction shows that the films annealed at 650°C exhibit tetragonal structure with perovskite phase. Replacement of lanthanum in lead titanate results in reduction of tetragonal ratio (c/a), resulting in better mechanical stability. Microstructural analysis of the films are carried out by taking the Atomic Force Microscope (AFM) pictures. AFM images are characterized by slight surface roughness with a uniform crack free, densely packed structure. Dielectric, pyroelectric and ferroelectric studies carried out on these films have been reported. Dielectric constant and pyroelectric coefficient increase while Curie temperature decreases with increase in La content. The pyroelectric figures of merit of the films have also been calculated which suggest that 8% lanthanum is best suited material for pyroelectric detectors owing to its high pyroelectric coefficient (∼ 29nC/cm2 K), high voltage responsivity (∼420Vcm2/J), high detectivity (∼1.04×10−5Pa−1/2) and low variation of pyrocoefficient with temperature.


2011 ◽  
Vol 04 (01) ◽  
pp. 45-48 ◽  
Author(s):  
Y. HE ◽  
X. M. LI ◽  
X. D. GAO ◽  
X. LENG ◽  
W. WANG

Lead magnesium niobate-lead titanate (PMN-PT) ferroelectric thin films were deposited on Ir/SrTiO3/TiN/Si (001) substrates by oxygen plasma assisted pulsed laser deposition (PLD) method. Effects of the lanthanum strontium cobaltite (LSCO) buffer layer between the PMN-PT film and the Ir layer on the crystallinity, microstructure, ferroelectric properties and electrocaloric effect of the film were investigated. Results show that the LSCO buffer layer can improve the crystallinity and electrocaloric properties effectively. By applying a voltage of 5V to the PMN-PT thin film without the LSCO buffer layer, the changes in the reversible adiabatic temperature measured at room temperature and at 508 K are respectively 0.73 K and 2.13 K, while by introducing a LSCO buffer layer, the corresponding values are increased to 1.41 K and 4.25 K.


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